Growth of GaN epitaxial films on polycrystalline diamond by metal-organic vapor phase epitaxy

Heat extraction is often essential in ensuring efficient performance of semiconductor devices and requires minimising the thermal resistance between the functional semiconductor layers and any heat sink. This paper reports the epitaxial growth of N-polar GaN films on polycrystalline diamond substrat...

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Veröffentlicht in:	Journal of physics. D, Applied physics Applied physics, 2017-04, Vol.50 (16), p.165103
Hauptverfasser:	Jiang, Quanzhong, Allsopp, Duncan W E, Bowen, Chris R
Format:	Artikel
Sprache:	eng
Schlagworte:	GaN-on-diamond metal-organic vapor phase epitaxy tensile stress reduction
Online-Zugang:	Volltext
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