Suspended GaN beams and membranes on Si as a platform for waveguide-based THz applications

We demonstrate the suitability of employing suspended GaN beams on a Π-shaped Si frame for waveguide-based cryogenic THz components and systems. This concept addresses major challenges and provides eased device handling, cryogenic operation, micron-alignment possibilities, high integratability and a...

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Veröffentlicht in:	Journal of micromechanics and microengineering 2018-10, Vol.28 (10), p.105007
Hauptverfasser:	Krause, S, Desmaris, V, Pavolotsky, A, Meledin, D, Belitsky, V
Format:	Artikel
Sprache:	eng
Schlagworte:	GaN on Si HEB THz components waveguide
Online-Zugang:	Volltext
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