Reaction of Implanted N Isotope with SiO 2 Near Si 3 N 4 -Film and SiO 2 -Substrate Interface

Reaction of Implanted N Isotope with SiO 2 Near Si 3 N 4 -Film and SiO 2 -Substrate Interface

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Veröffentlicht in:Journal of nuclear science and technology 2006-04, Vol.43 (4), p.382-385
Hauptverfasser: SHINDE, Ninad, MATSUNAMI, Noriaki, FUKUOKA, Osamu, TAZAWA, Masato, SHIMURA, Tetsuo, CHIMI, Yasuhiro, SATAKA, Masao
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container_title Journal of nuclear science and technology
container_volume 43
creator SHINDE, Ninad
MATSUNAMI, Noriaki
FUKUOKA, Osamu
TAZAWA, Masato
SHIMURA, Tetsuo
CHIMI, Yasuhiro
SATAKA, Masao
description
doi_str_mv 10.1080/18811248.2006.9711108
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source Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals; Alma/SFX Local Collection; Free Full-Text Journals in Chemistry
title Reaction of Implanted N Isotope with SiO 2 Near Si 3 N 4 -Film and SiO 2 -Substrate Interface
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