Glucose-based resistive random access memory for transient electronics
In this research, glucose was adopted as the switching layer of resistive random access memory (RRAM) for transient electronics. The fabricated glucose-based RRAM showed bipolar switching behavior with stable endurance (100 cycles) and retention (10 4 seconds) characteristics, without significant de...
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| Veröffentlicht in: | Journal of Information Display 2019, 20(4), , pp.231-237 |
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| creator | Park, Sung Pyo Kim, Hee Jun Lee, Jin Hyeok Kim, Hyun Jae |
| description | In this research, glucose was adopted as the switching layer of resistive random access memory (RRAM) for transient electronics. The fabricated glucose-based RRAM showed bipolar switching behavior with stable endurance (100 cycles) and retention (10
4
seconds) characteristics, without significant degradation, demonstrating its stable data storage capability and reliability. To investigate the switching mechanism of the glucose-based RRAM, various organic materials were prepared for the switching layer of RRAM. In addition, the dissolution characteristic of the glucose-based RRAM was evaluated to investigate the feasibility of its utilization for transient electronics, using a water-soluble substrate: a sodium carboxymethyl cellulose film. With this approach, a biocompatible glucose-based RRAM was successfully fabricated for future transient electronics. |
| doi_str_mv | 10.1080/15980316.2019.1664650 |
| format | Article |
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4
seconds) characteristics, without significant degradation, demonstrating its stable data storage capability and reliability. To investigate the switching mechanism of the glucose-based RRAM, various organic materials were prepared for the switching layer of RRAM. In addition, the dissolution characteristic of the glucose-based RRAM was evaluated to investigate the feasibility of its utilization for transient electronics, using a water-soluble substrate: a sodium carboxymethyl cellulose film. With this approach, a biocompatible glucose-based RRAM was successfully fabricated for future transient electronics.</description><identifier>ISSN: 1598-0316</identifier><identifier>EISSN: 2158-1606</identifier><identifier>DOI: 10.1080/15980316.2019.1664650</identifier><language>eng</language><publisher>Taylor & Francis</publisher><subject>biocompatibility ; Glucose ; implantable electronics ; resistive random access memory ; transient electronics ; 전기공학</subject><ispartof>Journal of Information Display, 2019, 20(4), , pp.231-237</ispartof><rights>2019 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group on behalf of the Korean Information Display Society. 2019</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c457t-e886353b2844bb242989b1479e2148ccca707f6bee5434d0c0011277af8aec193</citedby><cites>FETCH-LOGICAL-c457t-e886353b2844bb242989b1479e2148ccca707f6bee5434d0c0011277af8aec193</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.tandfonline.com/doi/pdf/10.1080/15980316.2019.1664650$$EPDF$$P50$$Ginformaworld$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.tandfonline.com/doi/full/10.1080/15980316.2019.1664650$$EHTML$$P50$$Ginformaworld$$Hfree_for_read</linktohtml><link.rule.ids>314,776,780,860,2096,27479,27901,27902,59116,59117</link.rule.ids><backlink>$$Uhttps://www.kci.go.kr/kciportal/ci/sereArticleSearch/ciSereArtiView.kci?sereArticleSearchBean.artiId=ART002535267$$DAccess content in National Research Foundation of Korea (NRF)$$Hfree_for_read</backlink></links><search><creatorcontrib>Park, Sung Pyo</creatorcontrib><creatorcontrib>Kim, Hee Jun</creatorcontrib><creatorcontrib>Lee, Jin Hyeok</creatorcontrib><creatorcontrib>Kim, Hyun Jae</creatorcontrib><title>Glucose-based resistive random access memory for transient electronics</title><title>Journal of Information Display</title><description>In this research, glucose was adopted as the switching layer of resistive random access memory (RRAM) for transient electronics. The fabricated glucose-based RRAM showed bipolar switching behavior with stable endurance (100 cycles) and retention (10
4
seconds) characteristics, without significant degradation, demonstrating its stable data storage capability and reliability. To investigate the switching mechanism of the glucose-based RRAM, various organic materials were prepared for the switching layer of RRAM. In addition, the dissolution characteristic of the glucose-based RRAM was evaluated to investigate the feasibility of its utilization for transient electronics, using a water-soluble substrate: a sodium carboxymethyl cellulose film. With this approach, a biocompatible glucose-based RRAM was successfully fabricated for future transient electronics.</description><subject>biocompatibility</subject><subject>Glucose</subject><subject>implantable electronics</subject><subject>resistive random access memory</subject><subject>transient electronics</subject><subject>전기공학</subject><issn>1598-0316</issn><issn>2158-1606</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>0YH</sourceid><sourceid>DOA</sourceid><recordid>eNp9kU9LxDAQxYMouKgfQejVQ9dMmqTJTRH_LAiC6Dmk6USibSNJVfbbm91Vj-YykHnvx_AeIadAl0AVPQehFW1ALhkFvQQpuRR0jywYCFWDpHKfLDaaeiM6JCc5v9LyuKZawYLc3A4fLmasO5uxrxLmkOfwiVWyUx_HyjqHOVcjjjGtKx9TNZdNDjjNFQ7o5hSn4PIxOfB2yHjyM4_I883109Vdff9wu7q6vK8dF-1co1KyEU3HFOddxzjTSnfAW40MuHLO2Za2XnaIgje8p45SANa21iuLDnRzRM523Cl58-aCiTZs50s0b8lcPj6tjGw4MN4U7Wqn7aN9Ne8pjDatt4btR0wvxqY5uAGN9ZJBOYW3quflxhKp7wUywTR2PW0LS-xYLsWcE_o_HlCz6cH89mA2PZifHorvYucLU8lutF8xDb2Z7XqIyZcgXcim-R_xDXUUjXg</recordid><startdate>20191002</startdate><enddate>20191002</enddate><creator>Park, Sung Pyo</creator><creator>Kim, Hee Jun</creator><creator>Lee, Jin Hyeok</creator><creator>Kim, Hyun Jae</creator><general>Taylor & Francis</general><general>Taylor & Francis Group</general><general>한국정보디스플레이학회</general><scope>0YH</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>DOA</scope><scope>ACYCR</scope></search><sort><creationdate>20191002</creationdate><title>Glucose-based resistive random access memory for transient electronics</title><author>Park, Sung Pyo ; Kim, Hee Jun ; Lee, Jin Hyeok ; Kim, Hyun Jae</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c457t-e886353b2844bb242989b1479e2148ccca707f6bee5434d0c0011277af8aec193</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>biocompatibility</topic><topic>Glucose</topic><topic>implantable electronics</topic><topic>resistive random access memory</topic><topic>transient electronics</topic><topic>전기공학</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Park, Sung Pyo</creatorcontrib><creatorcontrib>Kim, Hee Jun</creatorcontrib><creatorcontrib>Lee, Jin Hyeok</creatorcontrib><creatorcontrib>Kim, Hyun Jae</creatorcontrib><collection>Taylor & Francis Open Access</collection><collection>CrossRef</collection><collection>DOAJ Directory of Open Access Journals</collection><collection>Korean Citation Index</collection><jtitle>Journal of Information Display</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Park, Sung Pyo</au><au>Kim, Hee Jun</au><au>Lee, Jin Hyeok</au><au>Kim, Hyun Jae</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Glucose-based resistive random access memory for transient electronics</atitle><jtitle>Journal of Information Display</jtitle><date>2019-10-02</date><risdate>2019</risdate><volume>20</volume><issue>4</issue><spage>231</spage><epage>237</epage><pages>231-237</pages><issn>1598-0316</issn><eissn>2158-1606</eissn><abstract>In this research, glucose was adopted as the switching layer of resistive random access memory (RRAM) for transient electronics. The fabricated glucose-based RRAM showed bipolar switching behavior with stable endurance (100 cycles) and retention (10
4
seconds) characteristics, without significant degradation, demonstrating its stable data storage capability and reliability. To investigate the switching mechanism of the glucose-based RRAM, various organic materials were prepared for the switching layer of RRAM. In addition, the dissolution characteristic of the glucose-based RRAM was evaluated to investigate the feasibility of its utilization for transient electronics, using a water-soluble substrate: a sodium carboxymethyl cellulose film. With this approach, a biocompatible glucose-based RRAM was successfully fabricated for future transient electronics.</abstract><pub>Taylor & Francis</pub><doi>10.1080/15980316.2019.1664650</doi><tpages>7</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | biocompatibility Glucose implantable electronics resistive random access memory transient electronics 전기공학 |
| title | Glucose-based resistive random access memory for transient electronics |
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