Sputtering and coloration process in LiF thin layers induced by MeV ion bombardment

Beams of 2.0 MeV nitrogen ions, produced by a Van de Graaff generator, were used in order to create point defects in polycrystalline LiF thin films. The radiation effects were examined by optical absorption, RBS, PDMS and XPS methods. The concentration of the produced F-centers exhibits a saturation...

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Veröffentlicht in:	Radiation effects and defects in solids 1999-11, Vol.149 (1-4), p.215-219
Hauptverfasser:	Cremona, M., Pereira, J. A. M., Mauricio, M. H. P., Scavarda Do Carmo, L. C., Somma, F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Color center LiF PDMS RBS Sputtering Thin films
Online-Zugang:	Volltext
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