Sputtering and coloration process in LiF thin layers induced by MeV ion bombardment
Beams of 2.0 MeV nitrogen ions, produced by a Van de Graaff generator, were used in order to create point defects in polycrystalline LiF thin films. The radiation effects were examined by optical absorption, RBS, PDMS and XPS methods. The concentration of the produced F-centers exhibits a saturation...
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| Veröffentlicht in: | Radiation effects and defects in solids 1999-11, Vol.149 (1-4), p.215-219 |
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| container_title | Radiation effects and defects in solids |
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| creator | Cremona, M. Pereira, J. A. M. Mauricio, M. H. P. Scavarda Do Carmo, L. C. Somma, F. |
| description | Beams of 2.0 MeV nitrogen ions, produced by a Van de Graaff generator, were used in order to create point defects in polycrystalline LiF thin films. The radiation effects were examined by optical absorption, RBS, PDMS and XPS methods. The concentration of the produced F-centers exhibits a saturation behavior, but decreases for doses higher than ∼ 1 × 10
16
cm
−2
. A fluorine sputtering yield Y ∼ 3 was determined by using RBS. Moreover, XPS and PDMS techniques detected surface Li enrichment as a result of the ion bombardment. All these results denote the relevance of the sputtering in the de-coloration process of LiF thin layers. |
| doi_str_mv | 10.1080/10420159908230158 |
| format | Article |
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16
cm
−2
. A fluorine sputtering yield Y ∼ 3 was determined by using RBS. Moreover, XPS and PDMS techniques detected surface Li enrichment as a result of the ion bombardment. All these results denote the relevance of the sputtering in the de-coloration process of LiF thin layers.</description><identifier>ISSN: 1042-0150</identifier><identifier>EISSN: 1029-4953</identifier><identifier>DOI: 10.1080/10420159908230158</identifier><language>eng</language><publisher>Taylor & Francis Group</publisher><subject>Color center ; LiF ; PDMS ; RBS ; Sputtering ; Thin films</subject><ispartof>Radiation effects and defects in solids, 1999-11, Vol.149 (1-4), p.215-219</ispartof><rights>Copyright Taylor & Francis Group, LLC 1999</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c344t-7339c8c84517c495702520e843ed5cbba5f7b6478d30fada25fb527769440eb33</citedby><cites>FETCH-LOGICAL-c344t-7339c8c84517c495702520e843ed5cbba5f7b6478d30fada25fb527769440eb33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.tandfonline.com/doi/pdf/10.1080/10420159908230158$$EPDF$$P50$$Ginformaworld$$H</linktopdf><linktohtml>$$Uhttps://www.tandfonline.com/doi/full/10.1080/10420159908230158$$EHTML$$P50$$Ginformaworld$$H</linktohtml><link.rule.ids>314,780,784,27922,27923,59645,60434</link.rule.ids></links><search><creatorcontrib>Cremona, M.</creatorcontrib><creatorcontrib>Pereira, J. A. M.</creatorcontrib><creatorcontrib>Mauricio, M. H. P.</creatorcontrib><creatorcontrib>Scavarda Do Carmo, L. C.</creatorcontrib><creatorcontrib>Somma, F.</creatorcontrib><title>Sputtering and coloration process in LiF thin layers induced by MeV ion bombardment</title><title>Radiation effects and defects in solids</title><description>Beams of 2.0 MeV nitrogen ions, produced by a Van de Graaff generator, were used in order to create point defects in polycrystalline LiF thin films. The radiation effects were examined by optical absorption, RBS, PDMS and XPS methods. The concentration of the produced F-centers exhibits a saturation behavior, but decreases for doses higher than ∼ 1 × 10
16
cm
−2
. A fluorine sputtering yield Y ∼ 3 was determined by using RBS. Moreover, XPS and PDMS techniques detected surface Li enrichment as a result of the ion bombardment. All these results denote the relevance of the sputtering in the de-coloration process of LiF thin layers.</description><subject>Color center</subject><subject>LiF</subject><subject>PDMS</subject><subject>RBS</subject><subject>Sputtering</subject><subject>Thin films</subject><issn>1042-0150</issn><issn>1029-4953</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><recordid>eNqFkM1Kw0AUhQdRsFYfwN28QPTOX2cCbqRYFSouqm7D_EUjSabMTNG8vQl1V9DVPRzud7nnIHRJ4IqAgmsCnAIRZQmKslGoIzQjQMuCl4IdT5rTYvThFJ2l9AkAiis-Q5vNdpezj03_jnXvsA1tiDo3ocfbGKxPCTc9XjcrnD9G0erBx8lyO-sdNgN-8m942jahMzq6zvf5HJ3Uuk3-4nfO0evq7mX5UKyf7x-Xt-vCMs5zIRkrrbKKCyLt-KYEKih4xZl3whqjRS3NgkvlGNTaaSpqI6iUi5Jz8IaxOSL7uzaGlKKvq21sOh2HikA1tVIdtDIyN3um6esQO_0VYuuqrIcxdh11b5tUsb9w-S9-QFX5O7Mf5cB5tA</recordid><startdate>19991101</startdate><enddate>19991101</enddate><creator>Cremona, M.</creator><creator>Pereira, J. A. M.</creator><creator>Mauricio, M. H. P.</creator><creator>Scavarda Do Carmo, L. C.</creator><creator>Somma, F.</creator><general>Taylor & Francis Group</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19991101</creationdate><title>Sputtering and coloration process in LiF thin layers induced by MeV ion bombardment</title><author>Cremona, M. ; Pereira, J. A. M. ; Mauricio, M. H. P. ; Scavarda Do Carmo, L. C. ; Somma, F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c344t-7339c8c84517c495702520e843ed5cbba5f7b6478d30fada25fb527769440eb33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><topic>Color center</topic><topic>LiF</topic><topic>PDMS</topic><topic>RBS</topic><topic>Sputtering</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cremona, M.</creatorcontrib><creatorcontrib>Pereira, J. A. M.</creatorcontrib><creatorcontrib>Mauricio, M. H. P.</creatorcontrib><creatorcontrib>Scavarda Do Carmo, L. C.</creatorcontrib><creatorcontrib>Somma, F.</creatorcontrib><collection>CrossRef</collection><jtitle>Radiation effects and defects in solids</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cremona, M.</au><au>Pereira, J. A. M.</au><au>Mauricio, M. H. P.</au><au>Scavarda Do Carmo, L. C.</au><au>Somma, F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Sputtering and coloration process in LiF thin layers induced by MeV ion bombardment</atitle><jtitle>Radiation effects and defects in solids</jtitle><date>1999-11-01</date><risdate>1999</risdate><volume>149</volume><issue>1-4</issue><spage>215</spage><epage>219</epage><pages>215-219</pages><issn>1042-0150</issn><eissn>1029-4953</eissn><abstract>Beams of 2.0 MeV nitrogen ions, produced by a Van de Graaff generator, were used in order to create point defects in polycrystalline LiF thin films. The radiation effects were examined by optical absorption, RBS, PDMS and XPS methods. The concentration of the produced F-centers exhibits a saturation behavior, but decreases for doses higher than ∼ 1 × 10
16
cm
−2
. A fluorine sputtering yield Y ∼ 3 was determined by using RBS. Moreover, XPS and PDMS techniques detected surface Li enrichment as a result of the ion bombardment. All these results denote the relevance of the sputtering in the de-coloration process of LiF thin layers.</abstract><pub>Taylor & Francis Group</pub><doi>10.1080/10420159908230158</doi><tpages>5</tpages></addata></record> |
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| source | Taylor & Francis Journals Complete |
| subjects | Color center LiF PDMS RBS Sputtering Thin films |
| title | Sputtering and coloration process in LiF thin layers induced by MeV ion bombardment |
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