Ion-induced annealing of damage in GaAs implanted with argon ions

The process of the structure restoration of GaAs implanted with Ar + ions at the ion current densities of 10 and 25 μA/cm 2 and in the fluence interval of 6 × 10 13 -1 × 10 16 cm −2 has been analysed on the basis of Raman scattering (RS) and Rutherford backscattering (RBS) data taken into account th...

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Veröffentlicht in:	Radiation effects and defects in solids 1994-06, Vol.129 (3-4), p.147-154
Hauptverfasser:	Akimov, A. N., Vlasukova, L. A., Gusakov, G. A., Komarov, F. F., Kutas, A. A., Novikov, A. P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Doping and impurity implantation in iii-v and ii-vi semiconductors Exact sciences and technology GaAs implantation ion-beam induced annealing Physics Structure of solids and liquids crystallography structure restoration
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