Surface relaxation of strained semiconductor heterostructures revealed by finite-element calculations and transmission electron microscopy

Surface relaxation of a cross-section strained In 0.13 Ga 0.87 As layer buried in GaAs is studied by finite-element calculations and transmission electron microscopy (TEM). Strain fields in the In 0.13 Ga 0.87 As layer and in the cladding layers are calculated by the finite-element method and they a...

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Veröffentlicht in:	Philosophical magazine. A, Physics of condensed matter. Defects and mechanical properties Physics of condensed matter. Defects and mechanical properties, 1998-10, Vol.78 (4), p.879-891
Hauptverfasser:	Jacob, D., Androussi, Y, Benabbas, T., François, P., Lefebvre, A.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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