The observation of oxidation-induced stacking faults and extrinsic gettering in silicon using X-ray diffraction topography

The generation and development of oxidation-induced stacking faults (OISFs) in silicon wafers during complementary metal-oxide-silicon (CMOS) device processing has been studied using anomalous transmission X-ray topography together with synchrotron radiation double-crystal reflection topography. A c...

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Veröffentlicht in:	Philosophical magazine. A, Physics of condensed matter. Defects and mechanical properties Physics of condensed matter. Defects and mechanical properties, 1992-04, Vol.65 (4), p.783-795
1. Verfasser:	Halfpenny, P. J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Exact sciences and technology Physics Stacking faults and other planar or extended defects Structure of solids and liquids crystallography
Online-Zugang:	Volltext
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