Dose rate effects in indium implanted GaAs

Lattice disorder produced by 40 keV indium ions has been studied using conventional channelling and Rutherford backscattering of 2.0 MeV helium ions. Plots of lattice disorder as a function of dose are nonlinear and sigmoidal in shape. The lattice disorder saturates for doses approaching 10 14 ions....

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Veröffentlicht in:	Radiat. Eff., v. 23, no. 3, pp. 165-169 v. 23, no. 3, pp. 165-169, 1974-01, Vol.23 (3), p.165-169
Hauptverfasser:	Tinsley, A. W., Stephens, G. A., Nobes, M. J., Grant, W. A.
Format:	Artikel
Sprache:	eng
Schlagworte:	ANNEALING CRYSTAL LATTICES GALLIUM ARSENIDES- ORDER-DISORDER TRANSFORMATIONS INDIUM IONS ION BEAMS ION-MOLECULE COLLISIONS KEV RANGE 10- 100 N50240 -Metals, Ceramics, & Other Materials-Metals & Alloys-Radiation Effects PHYSICAL RADIATION EFFECTS
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