Diffusion of ion-implanted kr in rbcl and the effects of radiation damage

The diffusion of Kr in RbCl single crystals was studied following Kr implantation at 15 keV and doses of 3.7 × 10 13 to 3.7 × 10 15 ions/cm 2 . The compound exponential depth distribution was utilized by comparing ordinarily implanted specimens with others having the outermost ∼ 2000 Å removed in n-...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Radiat. Eff. 3: 161-7(Jun 1970) 1970-01, Vol.3 (2), p.161-167
Hauptverfasser:	Pronko, P. P., Kelly, R.
Format:	Artikel
Sprache:	eng
Schlagworte:	ACTIVATION ENERGY DEFECTS DIFFUSION ENTHALPY IMPURITIES INTERSTITIALS ION BEAMS ION IMPLANTATION KEV RANGE KRYPTON KRYPTON IONS/effects on rubidium chloride single crystals at 15 keV, (E) KRYPTON/diffusion in rubidium chloride single crystals after 15-keV implantation, (E) MONOCRYSTALS N33110 -Physics (Solid State)-Radiation Effects RADIATION EFFECTS RUBIDIUM CHLORIDES RUBIDIUM CHLORIDES/diffusion of krypton after 15- keV implantation in single crystals of, (E) TEMPERATURE VACANCIES
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!