Profiles of High Conductivity Shallow Layers in Silicon Produced by Boron Ion Implantation

The conductivity profiles produced when boron ions are implanted into silicon have been investigated as a function of ion energy, total ion flux and annealing schedule. The bombardments were carried out in a manner such that channelling was minimized. These profiles have been compared with those pre...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Int. J. Electron., 22: 153-64(Feb. 1967) 22: 153-64(Feb. 1967), 1967-02, Vol.22 (2), p.153-164
Hauptverfasser:	LARGE, L. N., HILL, H., BALL, MARY P.
Format:	Artikel
Sprache:	eng
Schlagworte:	BORON ELECTRIC CONDUCTIVITY ION BEAMS IONS N33100 -Physics (Solid State) RADIATION EFFECTS SILICON
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!