Electroluminescent vertical tunneling junctions based on WSe 2 monolayer quantum emitter arrays: Exploring tunability with electric and magnetic fields
We experimentally demonstrate the creation of defects in monolayer WSe via nanopillar imprinting and helium ion irradiation. Based on the first method, we realize atomically thin vertical tunneling light-emitting diodes based on WSe monolayers hosting quantum emitters at deterministically specified...
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Veröffentlicht in: | Proceedings of the National Academy of Sciences - PNAS 2024-06, Vol.121 (23), p.e2401757121 |
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container_title | Proceedings of the National Academy of Sciences - PNAS |
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creator | Howarth, James Vaklinova, Kristina Grzeszczyk, Magdalena Baldi, Giulio Hague, Lee Potemski, Marek Novoselov, Kostya S Kozikov, Aleksey Koperski, Maciej |
description | We experimentally demonstrate the creation of defects in monolayer WSe
via nanopillar imprinting and helium ion irradiation. Based on the first method, we realize atomically thin vertical tunneling light-emitting diodes based on WSe
monolayers hosting quantum emitters at deterministically specified locations. We characterize these emitters by investigating the evolution of their emission spectra in external electric and magnetic fields, as well as by inducing electroluminescence at low temperatures. We identify qualitatively different types of quantum emitters and classify them according to the dominant electron-hole recombination paths, determined by the mechanisms of intervalley mixing occurring in fundamental conduction and/or valence subbands. |
doi_str_mv | 10.1073/pnas.2401757121 |
format | Article |
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via nanopillar imprinting and helium ion irradiation. Based on the first method, we realize atomically thin vertical tunneling light-emitting diodes based on WSe
monolayers hosting quantum emitters at deterministically specified locations. We characterize these emitters by investigating the evolution of their emission spectra in external electric and magnetic fields, as well as by inducing electroluminescence at low temperatures. We identify qualitatively different types of quantum emitters and classify them according to the dominant electron-hole recombination paths, determined by the mechanisms of intervalley mixing occurring in fundamental conduction and/or valence subbands.</abstract><cop>United States</cop><pmid>38820004</pmid><doi>10.1073/pnas.2401757121</doi><orcidid>https://orcid.org/0000-0003-4972-5371</orcidid><orcidid>https://orcid.org/0000-0002-8301-914X</orcidid><orcidid>https://orcid.org/0000-0001-8881-6618</orcidid><oa>free_for_read</oa></addata></record> |
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title | Electroluminescent vertical tunneling junctions based on WSe 2 monolayer quantum emitter arrays: Exploring tunability with electric and magnetic fields |
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