High-power quasi-cw semiconductor lasers (1060 nm) with an ultra-wide emitting aperture

High-power quasi-cw semiconductor lasers (1060 nm) with an ultra-wide emitting aperture

High-power quasi-cw semiconductor lasers with an emitting aperture 800 μm wide and a continuous p-contact are developed. Laser operation with a pulse duration of 1 ms, a repetition rate of 10 Hz, and a maximum peak power of 87 W at a wavelength 1060 – 1070 nm is demonstrated under pumping by current...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Quantum electronics (Woodbury, N.Y.) N.Y.), 2022-04, Vol.52 (4), p.340-342
Hauptverfasser: Slipchenko, S.O., Romanovich, D.N., Kapitonov, V.A., Bakhvalov, K.V., Pikhtin, N.A., Kop’ev, P.S.
Format: Artikel
Sprache:eng
Schlagworte:
Apertures
Current pulses
heterostructure
mesa-stripe design
Overheating
Pulse duration
quasi-cw regime
Semiconductor lasers
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:High-power quasi-cw semiconductor lasers with an emitting aperture 800 μm wide and a continuous p-contact are developed. Laser operation with a pulse duration of 1 ms, a repetition rate of 10 Hz, and a maximum peak power of 87 W at a wavelength 1060 – 1070 nm is demonstrated under pumping by current pulses with am amplitude of 97 A. Experimental estimates show that overheating of the active region at the end of the laser pulse at a current of 97 A may reach 36.7 °C.
ISSN:1063-7818
1468-4799
DOI:10.1070/QEL18014