Optimization of InGaAs/GaAs quantum-well strain-layer heterojunction laser structures
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Veröffentlicht in: | Quantum electronics (Woodbury, N.Y.) N.Y.), 1993-05, Vol.23 (5), p.391-393 |
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container_title | Quantum electronics (Woodbury, N.Y.) |
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creator | Gorbylev, V A Petrov, A I Petukhov, A B Chel'niĭ, A A |
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doi_str_mv | 10.1070/QE1993v023n05ABEH003059 |
format | Article |
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ispartof | Quantum electronics (Woodbury, N.Y.), 1993-05, Vol.23 (5), p.391-393 |
issn | 1063-7818 1468-4799 |
language | eng |
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source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
title | Optimization of InGaAs/GaAs quantum-well strain-layer heterojunction laser structures |
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