Power characteristics of an He–Ne laser utilizing the 3 s 2 –2 p 6 transition in neon ( λ =612 nm) and containing a 127 I 2 absorption cell

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Veröffentlicht in:Soviet journal of quantum electronics 1982-11, Vol.12 (11), p.1529-1530
Hauptverfasser: Danileĭko, M V, Tselinko, A M, Yatsenko, L P
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Sprache:eng
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container_end_page 1530
container_issue 11
container_start_page 1529
container_title Soviet journal of quantum electronics
container_volume 12
creator Danileĭko, M V
Tselinko, A M
Yatsenko, L P
description
doi_str_mv 10.1070/QE1982v012n11ABEH006189
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1070_QE1982v012n11ABEH006189</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1070_QE1982v012n11ABEH006189</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1029-dc2bb151a97c29fc9757984f71454b4b7de70dc293edd94cb2d7c9df84e27d3</originalsourceid><addsrcrecordid>eNp1kD1OAzEUhF2ARAicgVdCseDnddbrgiJEgURC_Aj6ldf2EqONN7IXEFQcAYnjcAcOwUlwgJZqNJqZrxhC9pAeIhX06HqKsmSPFJlHHJ9MZ5QWWMoNMqCUywwFL7fIdoz3yRYiZwPydtU92QB6oYLSvQ0u9k5H6BpQHmb26_X9wkKrYuo89K51L87fQb-wkEMEBilnsIIC-qB8dL3rPDgP3ibdh88POC6QgV8eJJwB3fleOb9GKEAmYJ4Qqo5dWP0stW3bHbLZqDba3T8dkpvT6e1klp1fns0n4_NMI2UyM5rVNY5QSaGZbLQUIyFL3gjkI17zWhgraCrJ3Bojua6ZEVqapuSWCZMPifil6tDFGGxTrYJbqvBcIa3WV1b_XJl_A2M2a0Q</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Power characteristics of an He–Ne laser utilizing the 3 s 2 –2 p 6 transition in neon ( λ =612 nm) and containing a 127 I 2 absorption cell</title><source>Institute of Physics Journals</source><creator>Danileĭko, M V ; Tselinko, A M ; Yatsenko, L P</creator><creatorcontrib>Danileĭko, M V ; Tselinko, A M ; Yatsenko, L P</creatorcontrib><identifier>ISSN: 0049-1748</identifier><identifier>DOI: 10.1070/QE1982v012n11ABEH006189</identifier><language>eng</language><ispartof>Soviet journal of quantum electronics, 1982-11, Vol.12 (11), p.1529-1530</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1029-dc2bb151a97c29fc9757984f71454b4b7de70dc293edd94cb2d7c9df84e27d3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Danileĭko, M V</creatorcontrib><creatorcontrib>Tselinko, A M</creatorcontrib><creatorcontrib>Yatsenko, L P</creatorcontrib><title>Power characteristics of an He–Ne laser utilizing the 3 s 2 –2 p 6 transition in neon ( λ =612 nm) and containing a 127 I 2 absorption cell</title><title>Soviet journal of quantum electronics</title><issn>0049-1748</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1982</creationdate><recordtype>article</recordtype><recordid>eNp1kD1OAzEUhF2ARAicgVdCseDnddbrgiJEgURC_Aj6ldf2EqONN7IXEFQcAYnjcAcOwUlwgJZqNJqZrxhC9pAeIhX06HqKsmSPFJlHHJ9MZ5QWWMoNMqCUywwFL7fIdoz3yRYiZwPydtU92QB6oYLSvQ0u9k5H6BpQHmb26_X9wkKrYuo89K51L87fQb-wkEMEBilnsIIC-qB8dL3rPDgP3ibdh88POC6QgV8eJJwB3fleOb9GKEAmYJ4Qqo5dWP0stW3bHbLZqDba3T8dkpvT6e1klp1fns0n4_NMI2UyM5rVNY5QSaGZbLQUIyFL3gjkI17zWhgraCrJ3Bojua6ZEVqapuSWCZMPifil6tDFGGxTrYJbqvBcIa3WV1b_XJl_A2M2a0Q</recordid><startdate>19821130</startdate><enddate>19821130</enddate><creator>Danileĭko, M V</creator><creator>Tselinko, A M</creator><creator>Yatsenko, L P</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19821130</creationdate><title>Power characteristics of an He–Ne laser utilizing the 3 s 2 –2 p 6 transition in neon ( λ =612 nm) and containing a 127 I 2 absorption cell</title><author>Danileĭko, M V ; Tselinko, A M ; Yatsenko, L P</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1029-dc2bb151a97c29fc9757984f71454b4b7de70dc293edd94cb2d7c9df84e27d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1982</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Danileĭko, M V</creatorcontrib><creatorcontrib>Tselinko, A M</creatorcontrib><creatorcontrib>Yatsenko, L P</creatorcontrib><collection>CrossRef</collection><jtitle>Soviet journal of quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Danileĭko, M V</au><au>Tselinko, A M</au><au>Yatsenko, L P</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Power characteristics of an He–Ne laser utilizing the 3 s 2 –2 p 6 transition in neon ( λ =612 nm) and containing a 127 I 2 absorption cell</atitle><jtitle>Soviet journal of quantum electronics</jtitle><date>1982-11-30</date><risdate>1982</risdate><volume>12</volume><issue>11</issue><spage>1529</spage><epage>1530</epage><pages>1529-1530</pages><issn>0049-1748</issn><doi>10.1070/QE1982v012n11ABEH006189</doi><tpages>2</tpages></addata></record>
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language eng
recordid cdi_crossref_primary_10_1070_QE1982v012n11ABEH006189
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title Power characteristics of an He–Ne laser utilizing the 3 s 2 –2 p 6 transition in neon ( λ =612 nm) and containing a 127 I 2 absorption cell
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-23T20%3A39%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Power%20characteristics%20of%20an%20He%E2%80%93Ne%20laser%20utilizing%20the%203%20s%202%20%E2%80%932%20p%206%20transition%20in%20neon%20(%20%CE%BB%20=612%20nm)%20and%20containing%20a%20127%20I%202%20absorption%20cell&rft.jtitle=Soviet%20journal%20of%20quantum%20electronics&rft.au=Danile%C4%ADko,%20M%20V&rft.date=1982-11-30&rft.volume=12&rft.issue=11&rft.spage=1529&rft.epage=1530&rft.pages=1529-1530&rft.issn=0049-1748&rft_id=info:doi/10.1070/QE1982v012n11ABEH006189&rft_dat=%3Ccrossref%3E10_1070_QE1982v012n11ABEH006189%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true