Mechanistic study of β-Ga2O3 nitridation by RF nitrogen plasma for GaN heteroepitaxy

The transformation of 2 ¯ 01 β- Ga 2 O 3 to h- GaN under exposure to RF nitrogen plasma was monitored in situ by reflection high-energy electron diffraction. Analysis of the reaction kinetics reveals that the nitridation process is initiated by the formation of an oxynitride phase and proceeds via t...

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Veröffentlicht in:	Journal of applied physics 2024-10, Vol.136 (16)
Hauptverfasser:	Landi, Matthew M., Kelly, Frank P., Vesto, Riley E., Kim, Kyekyoon
Format:	Artikel
Sprache:	eng
Schlagworte:	Electron diffraction Gallium oxides Heterojunctions High energy electrons Nitrogen Nitrogen plasma Nucleation Phase transitions Photoelectrons Reaction kinetics Two dimensional analysis Wurtzite Zinc sulfide
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