GaN-on-sapphire JTE-anode lateral field-effect rectifier for improved breakdown voltage (>2.5 kV) and dynamic R ON

In high-power switching applications such as electric grids, transportation, and industrial electronics, power devices are supposed to have kilo-voltage (kV) level blocking capability. In this work, 1200-V gallium nitride (GaN) lateral field-effect rectifiers (LFERs) are demonstrated. The GaN-on-sap...

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Veröffentlicht in:	Applied physics letters 2024-10, Vol.125 (17)
Hauptverfasser:	Cui, Jiawei, Yang, Junjie, Yu, Jingjing, Li, Teng, Yang, Han, Liu, Xiaosen, Wang, Jinyan, Wang, Maojun, Shen, Bo, Wei, Jin
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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