Modeling interface roughness scattering with incorporation of potential energy and wave-function fluctuations: Enhancing mobility in AlN/GaN digital alloys

Interface roughness (IFR) scattering significantly impacts the mobility of two-dimensional electron gases (2DEGs) in heterostructures. While existing models for IFR scattering have advanced our understanding, they have notable limitations. The model developed by Jin et al. in 2007, while incorporati...

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