Theoretical study of metal contacts to the monolayer ferroelectric material CuInP2S6 and its device applications

Two-dimensional (2D) ferroelectric materials exhibit significant potential for applications in nonvolatile memory and device miniaturization. In the device design stage, it is essential to consider the compatibility between 2D ferroelectric materials and three-dimensional (3D) metal. However, the in...

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Veröffentlicht in:	Applied physics letters 2024-07, Vol.125 (4)
Hauptverfasser:	Qi, Jialong, Han, Huizhen, Yang, Shuli, Kang, Lili, Yin, Huabing, Zhao, Gaofeng
Format:	Artikel
Sprache:	eng
Schlagworte:	Contact resistance Ferroelectric materials Ferroelectricity First principles Gold Low resistance Monolayers Silver Tunnel junctions
Online-Zugang:	Volltext
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