Quantitative piezoelectric measurements of partially released Pb(Zr, Ti)O3 structures
The effective large signal longitudinal piezoelectric coefficient ( d 33 , f ∗ ) of piezoelectric thin films on rigid substrates has been widely investigated. Unclamped piezoelectric thin films are predicted to have a higher d 33 , f ∗ coefficient due to reduced constraints on piezoelectric strain,...
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creator | Tipsawat, Pannawit Zheng, Xiaojun Tran, Quyen T. Jackson, Thomas N. Trolier-McKinstry, Susan |
description | The effective large signal longitudinal piezoelectric coefficient
(
d
33
,
f
∗
) of piezoelectric thin films on rigid substrates has been widely investigated. Unclamped piezoelectric thin films are predicted to have a higher
d
33
,
f
∗ coefficient due to reduced constraints on piezoelectric strain, domain reorientation, and domain wall motion, but quantitative measurements of this coefficient have been limited. This study uses microfabrication techniques along with double-beam laser interferometry (DBLI) to accurately determine the longitudinal piezoelectric coefficient of Pb(Zr,Ti)O3 thin films in partially released piezomicroelectromechanical structures. A two-step backside release process was used: first, deep reactive ion etching to create backside vias and second, wet etching of the ZnO sacrificial layer to release the area beneath the Pb(Zr,Ti)O3 thin films. Post wet etching, optical profilometry showed concavely deformed diaphragms resulting from asymmetrical stress profiles through the diaphragm thickness. DBLI was then used to examine diaphragm deflection under an applied unipolar voltage ranging from 0 to 10 V. Devices with 50% and 75% of the area beneath the top electrode released exhibited large signal
d
33
,
f
∗ values of 410 ± 6 and 420 ± 8 pm/V, respectively, more than three times higher than the
d
33
,
f
∗ value of the clamped samples: 126 ± 13 pm/V. The reasons contributing to the large
d
33
,
f
∗ include (i) the change in stress levels due to the release process, (ii) the elimination of mechanical constraints from substrate clamping, and (iii) enhanced domain reorientation. These findings confirm that substrate declamping significantly boosts the piezoelectric coefficient, bringing
d
33
,
f
∗ closer to the bulk longitudinal piezoelectric coefficient (d33). |
doi_str_mv | 10.1063/5.0215677 |
format | Article |
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(
d
33
,
f
∗
) of piezoelectric thin films on rigid substrates has been widely investigated. Unclamped piezoelectric thin films are predicted to have a higher
d
33
,
f
∗ coefficient due to reduced constraints on piezoelectric strain, domain reorientation, and domain wall motion, but quantitative measurements of this coefficient have been limited. This study uses microfabrication techniques along with double-beam laser interferometry (DBLI) to accurately determine the longitudinal piezoelectric coefficient of Pb(Zr,Ti)O3 thin films in partially released piezomicroelectromechanical structures. A two-step backside release process was used: first, deep reactive ion etching to create backside vias and second, wet etching of the ZnO sacrificial layer to release the area beneath the Pb(Zr,Ti)O3 thin films. Post wet etching, optical profilometry showed concavely deformed diaphragms resulting from asymmetrical stress profiles through the diaphragm thickness. DBLI was then used to examine diaphragm deflection under an applied unipolar voltage ranging from 0 to 10 V. Devices with 50% and 75% of the area beneath the top electrode released exhibited large signal
d
33
,
f
∗ values of 410 ± 6 and 420 ± 8 pm/V, respectively, more than three times higher than the
d
33
,
f
∗ value of the clamped samples: 126 ± 13 pm/V. The reasons contributing to the large
d
33
,
f
∗ include (i) the change in stress levels due to the release process, (ii) the elimination of mechanical constraints from substrate clamping, and (iii) enhanced domain reorientation. These findings confirm that substrate declamping significantly boosts the piezoelectric coefficient, bringing
d
33
,
f
∗ closer to the bulk longitudinal piezoelectric coefficient (d33).</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/5.0215677</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Clamping ; Constraints ; Diaphragms ; Domain walls ; Etching ; Laser interferometry ; Lead zirconate titanates ; Piezoelectricity ; Reactive ion etching ; Substrates ; Thickness ; Thin films ; Zinc oxide ; Zirconium</subject><ispartof>Journal of applied physics, 2024-09, Vol.136 (9)</ispartof><rights>Author(s)</rights><rights>2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c217t-22c4b1b1c7d126cb2d36bdf22c1763405d3835237323c12cf86ccaaa0ecdfd083</cites><orcidid>0000-0003-2272-5830 ; 0009-0003-9146-511X ; 0000-0002-7267-9281 ; 0000-0003-2032-4240 ; 0009-0007-6992-645X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Tipsawat, Pannawit</creatorcontrib><creatorcontrib>Zheng, Xiaojun</creatorcontrib><creatorcontrib>Tran, Quyen T.</creatorcontrib><creatorcontrib>Jackson, Thomas N.</creatorcontrib><creatorcontrib>Trolier-McKinstry, Susan</creatorcontrib><title>Quantitative piezoelectric measurements of partially released Pb(Zr, Ti)O3 structures</title><title>Journal of applied physics</title><description>The effective large signal longitudinal piezoelectric coefficient
(
d
33
,
f
∗
) of piezoelectric thin films on rigid substrates has been widely investigated. Unclamped piezoelectric thin films are predicted to have a higher
d
33
,
f
∗ coefficient due to reduced constraints on piezoelectric strain, domain reorientation, and domain wall motion, but quantitative measurements of this coefficient have been limited. This study uses microfabrication techniques along with double-beam laser interferometry (DBLI) to accurately determine the longitudinal piezoelectric coefficient of Pb(Zr,Ti)O3 thin films in partially released piezomicroelectromechanical structures. A two-step backside release process was used: first, deep reactive ion etching to create backside vias and second, wet etching of the ZnO sacrificial layer to release the area beneath the Pb(Zr,Ti)O3 thin films. Post wet etching, optical profilometry showed concavely deformed diaphragms resulting from asymmetrical stress profiles through the diaphragm thickness. DBLI was then used to examine diaphragm deflection under an applied unipolar voltage ranging from 0 to 10 V. Devices with 50% and 75% of the area beneath the top electrode released exhibited large signal
d
33
,
f
∗ values of 410 ± 6 and 420 ± 8 pm/V, respectively, more than three times higher than the
d
33
,
f
∗ value of the clamped samples: 126 ± 13 pm/V. The reasons contributing to the large
d
33
,
f
∗ include (i) the change in stress levels due to the release process, (ii) the elimination of mechanical constraints from substrate clamping, and (iii) enhanced domain reorientation. These findings confirm that substrate declamping significantly boosts the piezoelectric coefficient, bringing
d
33
,
f
∗ closer to the bulk longitudinal piezoelectric coefficient (d33).</description><subject>Clamping</subject><subject>Constraints</subject><subject>Diaphragms</subject><subject>Domain walls</subject><subject>Etching</subject><subject>Laser interferometry</subject><subject>Lead zirconate titanates</subject><subject>Piezoelectricity</subject><subject>Reactive ion etching</subject><subject>Substrates</subject><subject>Thickness</subject><subject>Thin films</subject><subject>Zinc oxide</subject><subject>Zirconium</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LAzEQhoMoWKsH_0HAixW3ZpJms3uU4hcUqtBevIRskoWU7e6aZAv11xttz54GXp53hnkQugYyBZKzBz4lFHguxAkaASnKTHBOTtGIpDgrSlGeo4sQNoQAFKwcofXHoNrooopuZ3Hv7HdnG6ujdxpvrQqDt1vbxoC7GvfKR6eaZo99YlSwBr9Xt5_-Hq_cZMlwiH7QMTXCJTqrVRPs1XGO0fr5aTV_zRbLl7f54yLTFETMKNWzCirQwgDNdUUNyytTpxhEzmaEG1YwTplglGmgui5yrZVSxGpTG1KwMbo57O199zXYEOWmG3ybTkoGhDBIH4tETQ6U9l0I3tay926r_F4Ckb_WJJdHa4m9O7BB_0np2n_gH2htbHM</recordid><startdate>20240907</startdate><enddate>20240907</enddate><creator>Tipsawat, Pannawit</creator><creator>Zheng, Xiaojun</creator><creator>Tran, Quyen T.</creator><creator>Jackson, Thomas N.</creator><creator>Trolier-McKinstry, Susan</creator><general>American Institute of Physics</general><scope>AJDQP</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-2272-5830</orcidid><orcidid>https://orcid.org/0009-0003-9146-511X</orcidid><orcidid>https://orcid.org/0000-0002-7267-9281</orcidid><orcidid>https://orcid.org/0000-0003-2032-4240</orcidid><orcidid>https://orcid.org/0009-0007-6992-645X</orcidid></search><sort><creationdate>20240907</creationdate><title>Quantitative piezoelectric measurements of partially released Pb(Zr, Ti)O3 structures</title><author>Tipsawat, Pannawit ; Zheng, Xiaojun ; Tran, Quyen T. ; Jackson, Thomas N. ; Trolier-McKinstry, Susan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c217t-22c4b1b1c7d126cb2d36bdf22c1763405d3835237323c12cf86ccaaa0ecdfd083</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Clamping</topic><topic>Constraints</topic><topic>Diaphragms</topic><topic>Domain walls</topic><topic>Etching</topic><topic>Laser interferometry</topic><topic>Lead zirconate titanates</topic><topic>Piezoelectricity</topic><topic>Reactive ion etching</topic><topic>Substrates</topic><topic>Thickness</topic><topic>Thin films</topic><topic>Zinc oxide</topic><topic>Zirconium</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tipsawat, Pannawit</creatorcontrib><creatorcontrib>Zheng, Xiaojun</creatorcontrib><creatorcontrib>Tran, Quyen T.</creatorcontrib><creatorcontrib>Jackson, Thomas N.</creatorcontrib><creatorcontrib>Trolier-McKinstry, Susan</creatorcontrib><collection>AIP Open Access Journals</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tipsawat, Pannawit</au><au>Zheng, Xiaojun</au><au>Tran, Quyen T.</au><au>Jackson, Thomas N.</au><au>Trolier-McKinstry, Susan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Quantitative piezoelectric measurements of partially released Pb(Zr, Ti)O3 structures</atitle><jtitle>Journal of applied physics</jtitle><date>2024-09-07</date><risdate>2024</risdate><volume>136</volume><issue>9</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>The effective large signal longitudinal piezoelectric coefficient
(
d
33
,
f
∗
) of piezoelectric thin films on rigid substrates has been widely investigated. Unclamped piezoelectric thin films are predicted to have a higher
d
33
,
f
∗ coefficient due to reduced constraints on piezoelectric strain, domain reorientation, and domain wall motion, but quantitative measurements of this coefficient have been limited. This study uses microfabrication techniques along with double-beam laser interferometry (DBLI) to accurately determine the longitudinal piezoelectric coefficient of Pb(Zr,Ti)O3 thin films in partially released piezomicroelectromechanical structures. A two-step backside release process was used: first, deep reactive ion etching to create backside vias and second, wet etching of the ZnO sacrificial layer to release the area beneath the Pb(Zr,Ti)O3 thin films. Post wet etching, optical profilometry showed concavely deformed diaphragms resulting from asymmetrical stress profiles through the diaphragm thickness. DBLI was then used to examine diaphragm deflection under an applied unipolar voltage ranging from 0 to 10 V. Devices with 50% and 75% of the area beneath the top electrode released exhibited large signal
d
33
,
f
∗ values of 410 ± 6 and 420 ± 8 pm/V, respectively, more than three times higher than the
d
33
,
f
∗ value of the clamped samples: 126 ± 13 pm/V. The reasons contributing to the large
d
33
,
f
∗ include (i) the change in stress levels due to the release process, (ii) the elimination of mechanical constraints from substrate clamping, and (iii) enhanced domain reorientation. These findings confirm that substrate declamping significantly boosts the piezoelectric coefficient, bringing
d
33
,
f
∗ closer to the bulk longitudinal piezoelectric coefficient (d33).</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0215677</doi><tpages>13</tpages><orcidid>https://orcid.org/0000-0003-2272-5830</orcidid><orcidid>https://orcid.org/0009-0003-9146-511X</orcidid><orcidid>https://orcid.org/0000-0002-7267-9281</orcidid><orcidid>https://orcid.org/0000-0003-2032-4240</orcidid><orcidid>https://orcid.org/0009-0007-6992-645X</orcidid><oa>free_for_read</oa></addata></record> |
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source | Alma/SFX Local Collection |
subjects | Clamping Constraints Diaphragms Domain walls Etching Laser interferometry Lead zirconate titanates Piezoelectricity Reactive ion etching Substrates Thickness Thin films Zinc oxide Zirconium |
title | Quantitative piezoelectric measurements of partially released Pb(Zr, Ti)O3 structures |
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