Electrical control of the switching layer in perpendicular magnetic tunnel junctions with atomically thin Ir dusting
The use of magnetic tunnel junction (MTJ)-based devices constitutes an important basis of modern spintronics. However, the switching layer of an MTJ is widely believed to be an unmodifiable setup, instead of a user-defined option, posing a restriction to the function of spintronic devices. In this s...
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| Veröffentlicht in: | Applied physics letters 2024-04, Vol.124 (18) |
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| container_title | Applied physics letters |
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| creator | Lyu, Deyuan Khanal, Pravin Jia, Qi Guo, Silu Lv, Yang Zink, Brandon R. Zhang, Yu Yun, Hwanhui Zhou, Bowei Mkhoyan, K. Andre Wang, Wei-Gang Wang, Jian-Ping |
| description | The use of magnetic tunnel junction (MTJ)-based devices constitutes an important basis of modern spintronics. However, the switching layer of an MTJ is widely believed to be an unmodifiable setup, instead of a user-defined option, posing a restriction to the function of spintronic devices. In this study, we realized a reliable electrical control of the switching layer in perpendicular MTJs with 0.1 nm Ir dusting. Specifically, a voltage pulse with a higher amplitude drives the magnetization switching of the MTJ's bottom electrode, while a lower voltage amplitude switches its top electrode. We discussed the origin of this controllability and excluded the possibility of back-hopping. Given the established studies on enhancing the voltage-controlled magnetic anisotropy effect by adopting Ir, we attribute this switching behavior to the significant diffusion of Ir atoms into the top electrode, which is supported by scanning transmission electron microscopy with atomic resolution. |
| doi_str_mv | 10.1063/5.0203048 |
| format | Article |
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| source | AIP Journals Complete |
| subjects | Amplitudes Electric potential Electrical junctions Electrodes Magnetic anisotropy Magnetic switching Scanning transmission electron microscopy Spintronics Tunnel junctions Voltage |
| title | Electrical control of the switching layer in perpendicular magnetic tunnel junctions with atomically thin Ir dusting |
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