High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C
This Letter reports the stability of regrown and alloyed Ohmic contacts to AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) for high temperature applications up to 500 °C. Transfer length method (TLM) measurements from 25 to 500 °C in air show that the regrown contacts appear to be stable...
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| Veröffentlicht in: | Applied physics letters 2024-05, Vol.124 (20) |
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| creator | Niroula, John Xie, Qingyun Rajput, Nitul S. Darmawi-Iskandar, Patrick K. Rahman, Sheikh Ifatur Luo, Shisong Palash, Rafid Hassan Sikder, Bejoy Yuan, Mengyang Yadav, Pradyot Micale, Gillian K. Chowdhury, Nadim Zhao, Yuji Rajan, Siddharth Palacios, Tomás |
| description | This Letter reports the stability of regrown and alloyed Ohmic contacts to AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) for high temperature applications up to 500 °C. Transfer length method (TLM) measurements from 25 to 500 °C in air show that the regrown contacts appear to be stable up to 500 °C during short term (approximately 1 h) testing, while alloyed contacts appear to decrease in contact resistance from 300 to 500 °C though increases in the error bounds due to increase sheet resistance make it difficult to conclude definitely. Additionally, longer term testing shows both technologies remain stable at least up to 48 h at 500 °C, after which the large increase in sheet resistance makes the measurement uncertainty too large to conclude definitively. Advanced microscopy images indicate both the regrown and alloyed contact regions remain structurally intact after prolonged high temperature exposure with no visible degradation in crystallinity or metal composition. |
| doi_str_mv | 10.1063/5.0191297 |
| format | Article |
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Transfer length method (TLM) measurements from 25 to 500 °C in air show that the regrown contacts appear to be stable up to 500 °C during short term (approximately 1 h) testing, while alloyed contacts appear to decrease in contact resistance from 300 to 500 °C though increases in the error bounds due to increase sheet resistance make it difficult to conclude definitely. Additionally, longer term testing shows both technologies remain stable at least up to 48 h at 500 °C, after which the large increase in sheet resistance makes the measurement uncertainty too large to conclude definitively. 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Transfer length method (TLM) measurements from 25 to 500 °C in air show that the regrown contacts appear to be stable up to 500 °C during short term (approximately 1 h) testing, while alloyed contacts appear to decrease in contact resistance from 300 to 500 °C though increases in the error bounds due to increase sheet resistance make it difficult to conclude definitely. Additionally, longer term testing shows both technologies remain stable at least up to 48 h at 500 °C, after which the large increase in sheet resistance makes the measurement uncertainty too large to conclude definitively. 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Xie, Qingyun ; Rajput, Nitul S. ; Darmawi-Iskandar, Patrick K. ; Rahman, Sheikh Ifatur ; Luo, Shisong ; Palash, Rafid Hassan ; Sikder, Bejoy ; Yuan, Mengyang ; Yadav, Pradyot ; Micale, Gillian K. ; Chowdhury, Nadim ; Zhao, Yuji ; Rajan, Siddharth ; Palacios, Tomás</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c287t-76651ccc399bcc8b5cc4e10b9a3b3060760898c5bd34a6546c7fe954444fa2ef3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Aluminum gallium nitrides</topic><topic>Contact resistance</topic><topic>Electrical resistivity</topic><topic>Gallium nitrides</topic><topic>Heterostructures</topic><topic>High electron mobility transistors</topic><topic>High temperature</topic><topic>Semiconductor devices</topic><topic>Stability</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Niroula, John</creatorcontrib><creatorcontrib>Xie, Qingyun</creatorcontrib><creatorcontrib>Rajput, Nitul S.</creatorcontrib><creatorcontrib>Darmawi-Iskandar, Patrick K.</creatorcontrib><creatorcontrib>Rahman, Sheikh Ifatur</creatorcontrib><creatorcontrib>Luo, Shisong</creatorcontrib><creatorcontrib>Palash, Rafid Hassan</creatorcontrib><creatorcontrib>Sikder, Bejoy</creatorcontrib><creatorcontrib>Yuan, Mengyang</creatorcontrib><creatorcontrib>Yadav, Pradyot</creatorcontrib><creatorcontrib>Micale, Gillian K.</creatorcontrib><creatorcontrib>Chowdhury, Nadim</creatorcontrib><creatorcontrib>Zhao, Yuji</creatorcontrib><creatorcontrib>Rajan, Siddharth</creatorcontrib><creatorcontrib>Palacios, Tomás</creatorcontrib><collection>AIP Open Access Journals</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Niroula, John</au><au>Xie, Qingyun</au><au>Rajput, Nitul S.</au><au>Darmawi-Iskandar, Patrick K.</au><au>Rahman, Sheikh Ifatur</au><au>Luo, Shisong</au><au>Palash, Rafid Hassan</au><au>Sikder, Bejoy</au><au>Yuan, Mengyang</au><au>Yadav, Pradyot</au><au>Micale, Gillian K.</au><au>Chowdhury, Nadim</au><au>Zhao, Yuji</au><au>Rajan, Siddharth</au><au>Palacios, Tomás</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C</atitle><jtitle>Applied physics letters</jtitle><date>2024-05-13</date><risdate>2024</risdate><volume>124</volume><issue>20</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>This Letter reports the stability of regrown and alloyed Ohmic contacts to AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) for high temperature applications up to 500 °C. Transfer length method (TLM) measurements from 25 to 500 °C in air show that the regrown contacts appear to be stable up to 500 °C during short term (approximately 1 h) testing, while alloyed contacts appear to decrease in contact resistance from 300 to 500 °C though increases in the error bounds due to increase sheet resistance make it difficult to conclude definitely. Additionally, longer term testing shows both technologies remain stable at least up to 48 h at 500 °C, after which the large increase in sheet resistance makes the measurement uncertainty too large to conclude definitively. 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| source | AIP Journals Complete |
| subjects | Aluminum gallium nitrides Contact resistance Electrical resistivity Gallium nitrides Heterostructures High electron mobility transistors High temperature Semiconductor devices Stability |
| title | High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C |
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