Enhanced surface passivation of GaAs nanostructures via an optimized SiO2 sol-gel shell growth

Gallium arsenide (GaAs) is an important compound semiconductor for optoelectronic devices. However, the fast nonradiative recombination velocity of GaAs requires surface passivation for the nano-optoelectronic and nanophotonic applications. Despite strides have been made in GaAs surface passivation,...

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Veröffentlicht in:	Applied physics letters 2024-03, Vol.124 (12)
Hauptverfasser:	Shen, Jingjing, Chen, Haitao, He, Jun, Li, Yejun, Yang, Xinhui, Zhu, Mengjian, Yuan, Xiaoming
Format:	Artikel
Sprache:	eng
Schlagworte:	Ammonium sulfides Chemical treatment Diameters Electrons Gallium arsenide High temperature plasmas Minority carriers Nanostructure Nanowires Optoelectronic devices Passivity Photoelectrons Room temperature Silicon dioxide Sol-gel processes Sulfidation X ray photoelectron spectroscopy
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