Elimination of spiral hillocks in AlGaN grown on high-temperature annealed AlN templates by adopting an AlN/AlGaN stress modulation multilayer
The formation of spiral hillocks during AlGaN growth is investigated by modulating the residual strain in the underlying AlN templates. It is demonstrated that the high-density hillocks are directly related to the compressive stress, in particular for AlGaN on high-temperature annealed (HTA) AlN. Al...
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| Veröffentlicht in: | Applied physics letters 2024-02, Vol.124 (6) |
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| container_title | Applied physics letters |
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| creator | Fang, Xuzhou Wang, Jiaming Xu, Fujun Zhang, Lisheng Lang, Jing Zhang, Ziyao Tan, Fuyun Yang, Xuelin Kang, Xiangning Qin, Zhixin Tang, Ning Wang, Xinqiang Ge, Weikun Shen, Bo |
| description | The formation of spiral hillocks during AlGaN growth is investigated by modulating the residual strain in the underlying AlN templates. It is demonstrated that the high-density hillocks are directly related to the compressive stress, in particular for AlGaN on high-temperature annealed (HTA) AlN. AlN/AlGaN stress modulation multilayer is then introduced and optimized before AlGaN growth, which is revealed to be helpful to release the compressive stress in AlGaN as well as to suppress the hillocks. Eventually, the hillocks in AlGaN/HTA-AlN are eliminated, leading to a great improvement of yield for deep-ultraviolet light-emitting diode (DUV-LED) wafers. This work will definitely promote further industrial development and application of DUV-LEDs. |
| doi_str_mv | 10.1063/5.0184353 |
| format | Article |
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It is demonstrated that the high-density hillocks are directly related to the compressive stress, in particular for AlGaN on high-temperature annealed (HTA) AlN. AlN/AlGaN stress modulation multilayer is then introduced and optimized before AlGaN growth, which is revealed to be helpful to release the compressive stress in AlGaN as well as to suppress the hillocks. Eventually, the hillocks in AlGaN/HTA-AlN are eliminated, leading to a great improvement of yield for deep-ultraviolet light-emitting diode (DUV-LED) wafers. This work will definitely promote further industrial development and application of DUV-LEDs.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0184353</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Aluminum gallium nitrides ; Annealing ; Compressive properties ; High temperature ; Industrial development ; Light emitting diodes ; Modulation ; Multilayers ; Ultraviolet radiation</subject><ispartof>Applied physics letters, 2024-02, Vol.124 (6)</ispartof><rights>Author(s)</rights><rights>2024 Author(s). Published under an exclusive license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c287t-2cd57403df1f47eaa653460d94aa70fa7ec40623ab86499015e91624965d82d63</cites><orcidid>0000-0001-5152-5075 ; 0000-0002-0751-6566 ; 0000-0001-5514-8588 ; 0000-0003-1901-3998 ; 0000-0003-2576-523X ; 0000-0003-4774-2899 ; 0009-0002-1802-1670 ; 0009-0006-6390-9854</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/5.0184353$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,784,794,4512,27924,27925,76384</link.rule.ids></links><search><creatorcontrib>Fang, Xuzhou</creatorcontrib><creatorcontrib>Wang, Jiaming</creatorcontrib><creatorcontrib>Xu, Fujun</creatorcontrib><creatorcontrib>Zhang, Lisheng</creatorcontrib><creatorcontrib>Lang, Jing</creatorcontrib><creatorcontrib>Zhang, Ziyao</creatorcontrib><creatorcontrib>Tan, Fuyun</creatorcontrib><creatorcontrib>Yang, Xuelin</creatorcontrib><creatorcontrib>Kang, Xiangning</creatorcontrib><creatorcontrib>Qin, Zhixin</creatorcontrib><creatorcontrib>Tang, Ning</creatorcontrib><creatorcontrib>Wang, Xinqiang</creatorcontrib><creatorcontrib>Ge, Weikun</creatorcontrib><creatorcontrib>Shen, Bo</creatorcontrib><title>Elimination of spiral hillocks in AlGaN grown on high-temperature annealed AlN templates by adopting an AlN/AlGaN stress modulation multilayer</title><title>Applied physics letters</title><description>The formation of spiral hillocks during AlGaN growth is investigated by modulating the residual strain in the underlying AlN templates. It is demonstrated that the high-density hillocks are directly related to the compressive stress, in particular for AlGaN on high-temperature annealed (HTA) AlN. AlN/AlGaN stress modulation multilayer is then introduced and optimized before AlGaN growth, which is revealed to be helpful to release the compressive stress in AlGaN as well as to suppress the hillocks. Eventually, the hillocks in AlGaN/HTA-AlN are eliminated, leading to a great improvement of yield for deep-ultraviolet light-emitting diode (DUV-LED) wafers. This work will definitely promote further industrial development and application of DUV-LEDs.</description><subject>Aluminum gallium nitrides</subject><subject>Annealing</subject><subject>Compressive properties</subject><subject>High temperature</subject><subject>Industrial development</subject><subject>Light emitting diodes</subject><subject>Modulation</subject><subject>Multilayers</subject><subject>Ultraviolet radiation</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp90M1Kw0AQB_BFFKzVg2-w4Ekh7X4nORbRKpR60XOYJpt26yYbdzdIX8JnNjU9exqG_48ZZhC6pWRGieJzOSM0E1zyMzShJE0TTml2jiaEEJ6oXNJLdBXCfmgl43yCfp6saUwL0bgWuxqHzniweGesdeVnwKbFC7uENd569z2Idoi2uyTqptMeYu81hrbVYHU1wDU-BhaiDnhzwFC5Lpp2O5BjOB8nheh1CLhxVW_HvU1vo7Fw0P4aXdRgg7451Sn6eH56f3xJVm_L18fFKilZlsaElZVMBeFVTWuRagAluVCkygVASmpIdSmIYhw2mRJ5TqjUOVVM5EpWGasUn6K7cW7n3VevQyz2rvftsLJgOWOMslykg7ofVeldCF7XRedNA_5QUFIc313I4vTuwT6MNpQm_p31D_4FwFx_8g</recordid><startdate>20240205</startdate><enddate>20240205</enddate><creator>Fang, Xuzhou</creator><creator>Wang, Jiaming</creator><creator>Xu, Fujun</creator><creator>Zhang, Lisheng</creator><creator>Lang, Jing</creator><creator>Zhang, Ziyao</creator><creator>Tan, Fuyun</creator><creator>Yang, Xuelin</creator><creator>Kang, Xiangning</creator><creator>Qin, Zhixin</creator><creator>Tang, Ning</creator><creator>Wang, Xinqiang</creator><creator>Ge, Weikun</creator><creator>Shen, Bo</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-5152-5075</orcidid><orcidid>https://orcid.org/0000-0002-0751-6566</orcidid><orcidid>https://orcid.org/0000-0001-5514-8588</orcidid><orcidid>https://orcid.org/0000-0003-1901-3998</orcidid><orcidid>https://orcid.org/0000-0003-2576-523X</orcidid><orcidid>https://orcid.org/0000-0003-4774-2899</orcidid><orcidid>https://orcid.org/0009-0002-1802-1670</orcidid><orcidid>https://orcid.org/0009-0006-6390-9854</orcidid></search><sort><creationdate>20240205</creationdate><title>Elimination of spiral hillocks in AlGaN grown on high-temperature annealed AlN templates by adopting an AlN/AlGaN stress modulation multilayer</title><author>Fang, Xuzhou ; Wang, Jiaming ; Xu, Fujun ; Zhang, Lisheng ; Lang, Jing ; Zhang, Ziyao ; Tan, Fuyun ; Yang, Xuelin ; Kang, Xiangning ; Qin, Zhixin ; Tang, Ning ; Wang, Xinqiang ; Ge, Weikun ; Shen, Bo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c287t-2cd57403df1f47eaa653460d94aa70fa7ec40623ab86499015e91624965d82d63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Aluminum gallium nitrides</topic><topic>Annealing</topic><topic>Compressive properties</topic><topic>High temperature</topic><topic>Industrial development</topic><topic>Light emitting diodes</topic><topic>Modulation</topic><topic>Multilayers</topic><topic>Ultraviolet radiation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fang, Xuzhou</creatorcontrib><creatorcontrib>Wang, Jiaming</creatorcontrib><creatorcontrib>Xu, Fujun</creatorcontrib><creatorcontrib>Zhang, Lisheng</creatorcontrib><creatorcontrib>Lang, Jing</creatorcontrib><creatorcontrib>Zhang, Ziyao</creatorcontrib><creatorcontrib>Tan, Fuyun</creatorcontrib><creatorcontrib>Yang, Xuelin</creatorcontrib><creatorcontrib>Kang, Xiangning</creatorcontrib><creatorcontrib>Qin, Zhixin</creatorcontrib><creatorcontrib>Tang, Ning</creatorcontrib><creatorcontrib>Wang, Xinqiang</creatorcontrib><creatorcontrib>Ge, Weikun</creatorcontrib><creatorcontrib>Shen, Bo</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Fang, Xuzhou</au><au>Wang, Jiaming</au><au>Xu, Fujun</au><au>Zhang, Lisheng</au><au>Lang, Jing</au><au>Zhang, Ziyao</au><au>Tan, Fuyun</au><au>Yang, Xuelin</au><au>Kang, Xiangning</au><au>Qin, Zhixin</au><au>Tang, Ning</au><au>Wang, Xinqiang</au><au>Ge, Weikun</au><au>Shen, Bo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Elimination of spiral hillocks in AlGaN grown on high-temperature annealed AlN templates by adopting an AlN/AlGaN stress modulation multilayer</atitle><jtitle>Applied physics letters</jtitle><date>2024-02-05</date><risdate>2024</risdate><volume>124</volume><issue>6</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The formation of spiral hillocks during AlGaN growth is investigated by modulating the residual strain in the underlying AlN templates. It is demonstrated that the high-density hillocks are directly related to the compressive stress, in particular for AlGaN on high-temperature annealed (HTA) AlN. AlN/AlGaN stress modulation multilayer is then introduced and optimized before AlGaN growth, which is revealed to be helpful to release the compressive stress in AlGaN as well as to suppress the hillocks. Eventually, the hillocks in AlGaN/HTA-AlN are eliminated, leading to a great improvement of yield for deep-ultraviolet light-emitting diode (DUV-LED) wafers. This work will definitely promote further industrial development and application of DUV-LEDs.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0184353</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0001-5152-5075</orcidid><orcidid>https://orcid.org/0000-0002-0751-6566</orcidid><orcidid>https://orcid.org/0000-0001-5514-8588</orcidid><orcidid>https://orcid.org/0000-0003-1901-3998</orcidid><orcidid>https://orcid.org/0000-0003-2576-523X</orcidid><orcidid>https://orcid.org/0000-0003-4774-2899</orcidid><orcidid>https://orcid.org/0009-0002-1802-1670</orcidid><orcidid>https://orcid.org/0009-0006-6390-9854</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | Aluminum gallium nitrides Annealing Compressive properties High temperature Industrial development Light emitting diodes Modulation Multilayers Ultraviolet radiation |
| title | Elimination of spiral hillocks in AlGaN grown on high-temperature annealed AlN templates by adopting an AlN/AlGaN stress modulation multilayer |
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