Enhancement of photoexcited carrier lifetime in an InGaAs/GaAsP wire-on-well quantum structure investigated by excitation-power-dependent photoluminescence measurements

A wire-on-well (WoW) structure was fabricated using InGaAs/GaAs/GaAsP superlattice device growth technology. This structure modifies the local concentration of carriers in the quantum well and lengthens the carrier lifetime to increase carrier transport efficiency. However, the reason for this remai...

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Veröffentlicht in:	Journal of applied physics 2024-04, Vol.135 (15)
Hauptverfasser:	Komaba, Shintaro, Taketa, Nana, Asami, Meita, Sugiyama, Masakazu, Ikari, Tetsuo, Fukuyama, Atsuhiko
Format:	Artikel
Sprache:	eng
Schlagworte:	Blue shift Carrier density Carrier lifetime Carrier transport Compressive properties Electric fields Excitation Gallium arsenide phosphide Indium gallium arsenides Photoluminescence Quantum phenomena Quantum wells Stark effect Superlattices Transition probabilities Wave functions Wire
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