Vertical ferroelectricity in van der Waals materials: Models and devices

Ferroelectricity has a wide range of applications in functional electronics, and it is extremely important for the development of the next generation of information-storage technologies. However, it is difficult to achieve in practice due to its special symmetry requirements. In this Letter, based o...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2023-10, Vol.123 (14)
Hauptverfasser: Zhang, Yuwen, Cui, Chunfeng, He, Chaoyu, Ouyang, Tao, Li, Jin, Chen, Mingxing, Tang, Chao
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 14
container_start_page
container_title Applied physics letters
container_volume 123
creator Zhang, Yuwen
Cui, Chunfeng
He, Chaoyu
Ouyang, Tao
Li, Jin
Chen, Mingxing
Tang, Chao
description Ferroelectricity has a wide range of applications in functional electronics, and it is extremely important for the development of the next generation of information-storage technologies. However, it is difficult to achieve in practice due to its special symmetry requirements. In this Letter, based on van der Waals stacking, a generic model is proposed for realizing ferroelectric devices in which a freely movable center layer is packaged in two fixed and symmetrically stacked layers. In this model, a ferroelectric phase transition can be realized between two equivalent and eccentric ground stacking states with opposite polarizations. By means of first-principles calculations, taking stacked hexagonal boron nitride (h-BN/h-BN/h-BN) and h-BN/graphene/h-BN as feasible models, we carefully evaluated the magnitude of ferroelectricity. The corresponding polarizations were estimated as 1.83 and 1.35 pC/m, values that are comparable to those observed in sliding ferroelectricity. Devices using this tri-layer model of vertical ferroelectricity can be constructed using arbitrary van der Waals semiconducting materials, and these will usually have low switching barriers. It is highly likely that optimized material combinations with remarkable polarization will be discovered from the huge candidate set this provides for future information-storage applications.
doi_str_mv 10.1063/5.0168454
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_5_0168454</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2871424529</sourcerecordid><originalsourceid>FETCH-LOGICAL-c327t-69652184494c99d6a632bad2ccdfc8f2766957012bbbeae5d343159b36235e733</originalsourceid><addsrcrecordid>eNp9kE1LAzEQhoMoWKsH_0HAk8LWfGfXmxS1QsWLH8eQTWYhpd2tSVrovzeyPXuaj_dh5p1B6JqSGSWK38sZoaoWUpygCSVaV5zS-hRNCCG8Uo2k5-gipVUpJeN8ghZfEHNwdo07iHGANbgcgwv5gEOP97bHHiL-tnad8MZmiKFkD_ht8FA6tvdF3wcH6RKddUWCq2Ocos_np4_5olq-v7zOH5eV40znYkFJRmshGuGaxiurOGutZ875ztUd06qY1ISytm3BgvRccCqblivGJWjOp-hmnLuNw88OUjarYRf7stKwWlPBhGRNoW5HysUhpQid2cawsfFgKDF_jzLSHB9V2LuRTeVsm8PQ_wP_AvFTZmY</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2871424529</pqid></control><display><type>article</type><title>Vertical ferroelectricity in van der Waals materials: Models and devices</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Zhang, Yuwen ; Cui, Chunfeng ; He, Chaoyu ; Ouyang, Tao ; Li, Jin ; Chen, Mingxing ; Tang, Chao</creator><creatorcontrib>Zhang, Yuwen ; Cui, Chunfeng ; He, Chaoyu ; Ouyang, Tao ; Li, Jin ; Chen, Mingxing ; Tang, Chao</creatorcontrib><description>Ferroelectricity has a wide range of applications in functional electronics, and it is extremely important for the development of the next generation of information-storage technologies. However, it is difficult to achieve in practice due to its special symmetry requirements. In this Letter, based on van der Waals stacking, a generic model is proposed for realizing ferroelectric devices in which a freely movable center layer is packaged in two fixed and symmetrically stacked layers. In this model, a ferroelectric phase transition can be realized between two equivalent and eccentric ground stacking states with opposite polarizations. By means of first-principles calculations, taking stacked hexagonal boron nitride (h-BN/h-BN/h-BN) and h-BN/graphene/h-BN as feasible models, we carefully evaluated the magnitude of ferroelectricity. The corresponding polarizations were estimated as 1.83 and 1.35 pC/m, values that are comparable to those observed in sliding ferroelectricity. Devices using this tri-layer model of vertical ferroelectricity can be constructed using arbitrary van der Waals semiconducting materials, and these will usually have low switching barriers. It is highly likely that optimized material combinations with remarkable polarization will be discovered from the huge candidate set this provides for future information-storage applications.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0168454</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Boron nitride ; Ferroelectric materials ; Ferroelectricity ; First principles ; Graphene ; Phase transitions ; Stacking</subject><ispartof>Applied physics letters, 2023-10, Vol.123 (14)</ispartof><rights>Author(s)</rights><rights>2023 Author(s). Published under an exclusive license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c327t-69652184494c99d6a632bad2ccdfc8f2766957012bbbeae5d343159b36235e733</citedby><cites>FETCH-LOGICAL-c327t-69652184494c99d6a632bad2ccdfc8f2766957012bbbeae5d343159b36235e733</cites><orcidid>0000-0001-8363-2991 ; 0000-0003-3562-4537 ; 0000-0003-1084-8294 ; 0000-0002-9354-0502 ; 0000-0003-3741-0444 ; 0000-0002-5779-3369 ; 0000-0003-0748-4274</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/5.0168454$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,4498,27901,27902,76127</link.rule.ids></links><search><creatorcontrib>Zhang, Yuwen</creatorcontrib><creatorcontrib>Cui, Chunfeng</creatorcontrib><creatorcontrib>He, Chaoyu</creatorcontrib><creatorcontrib>Ouyang, Tao</creatorcontrib><creatorcontrib>Li, Jin</creatorcontrib><creatorcontrib>Chen, Mingxing</creatorcontrib><creatorcontrib>Tang, Chao</creatorcontrib><title>Vertical ferroelectricity in van der Waals materials: Models and devices</title><title>Applied physics letters</title><description>Ferroelectricity has a wide range of applications in functional electronics, and it is extremely important for the development of the next generation of information-storage technologies. However, it is difficult to achieve in practice due to its special symmetry requirements. In this Letter, based on van der Waals stacking, a generic model is proposed for realizing ferroelectric devices in which a freely movable center layer is packaged in two fixed and symmetrically stacked layers. In this model, a ferroelectric phase transition can be realized between two equivalent and eccentric ground stacking states with opposite polarizations. By means of first-principles calculations, taking stacked hexagonal boron nitride (h-BN/h-BN/h-BN) and h-BN/graphene/h-BN as feasible models, we carefully evaluated the magnitude of ferroelectricity. The corresponding polarizations were estimated as 1.83 and 1.35 pC/m, values that are comparable to those observed in sliding ferroelectricity. Devices using this tri-layer model of vertical ferroelectricity can be constructed using arbitrary van der Waals semiconducting materials, and these will usually have low switching barriers. It is highly likely that optimized material combinations with remarkable polarization will be discovered from the huge candidate set this provides for future information-storage applications.</description><subject>Applied physics</subject><subject>Boron nitride</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>First principles</subject><subject>Graphene</subject><subject>Phase transitions</subject><subject>Stacking</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LAzEQhoMoWKsH_0HAk8LWfGfXmxS1QsWLH8eQTWYhpd2tSVrovzeyPXuaj_dh5p1B6JqSGSWK38sZoaoWUpygCSVaV5zS-hRNCCG8Uo2k5-gipVUpJeN8ghZfEHNwdo07iHGANbgcgwv5gEOP97bHHiL-tnad8MZmiKFkD_ht8FA6tvdF3wcH6RKddUWCq2Ocos_np4_5olq-v7zOH5eV40znYkFJRmshGuGaxiurOGutZ875ztUd06qY1ISytm3BgvRccCqblivGJWjOp-hmnLuNw88OUjarYRf7stKwWlPBhGRNoW5HysUhpQid2cawsfFgKDF_jzLSHB9V2LuRTeVsm8PQ_wP_AvFTZmY</recordid><startdate>20231002</startdate><enddate>20231002</enddate><creator>Zhang, Yuwen</creator><creator>Cui, Chunfeng</creator><creator>He, Chaoyu</creator><creator>Ouyang, Tao</creator><creator>Li, Jin</creator><creator>Chen, Mingxing</creator><creator>Tang, Chao</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-8363-2991</orcidid><orcidid>https://orcid.org/0000-0003-3562-4537</orcidid><orcidid>https://orcid.org/0000-0003-1084-8294</orcidid><orcidid>https://orcid.org/0000-0002-9354-0502</orcidid><orcidid>https://orcid.org/0000-0003-3741-0444</orcidid><orcidid>https://orcid.org/0000-0002-5779-3369</orcidid><orcidid>https://orcid.org/0000-0003-0748-4274</orcidid></search><sort><creationdate>20231002</creationdate><title>Vertical ferroelectricity in van der Waals materials: Models and devices</title><author>Zhang, Yuwen ; Cui, Chunfeng ; He, Chaoyu ; Ouyang, Tao ; Li, Jin ; Chen, Mingxing ; Tang, Chao</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-69652184494c99d6a632bad2ccdfc8f2766957012bbbeae5d343159b36235e733</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Applied physics</topic><topic>Boron nitride</topic><topic>Ferroelectric materials</topic><topic>Ferroelectricity</topic><topic>First principles</topic><topic>Graphene</topic><topic>Phase transitions</topic><topic>Stacking</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Yuwen</creatorcontrib><creatorcontrib>Cui, Chunfeng</creatorcontrib><creatorcontrib>He, Chaoyu</creatorcontrib><creatorcontrib>Ouyang, Tao</creatorcontrib><creatorcontrib>Li, Jin</creatorcontrib><creatorcontrib>Chen, Mingxing</creatorcontrib><creatorcontrib>Tang, Chao</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, Yuwen</au><au>Cui, Chunfeng</au><au>He, Chaoyu</au><au>Ouyang, Tao</au><au>Li, Jin</au><au>Chen, Mingxing</au><au>Tang, Chao</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Vertical ferroelectricity in van der Waals materials: Models and devices</atitle><jtitle>Applied physics letters</jtitle><date>2023-10-02</date><risdate>2023</risdate><volume>123</volume><issue>14</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Ferroelectricity has a wide range of applications in functional electronics, and it is extremely important for the development of the next generation of information-storage technologies. However, it is difficult to achieve in practice due to its special symmetry requirements. In this Letter, based on van der Waals stacking, a generic model is proposed for realizing ferroelectric devices in which a freely movable center layer is packaged in two fixed and symmetrically stacked layers. In this model, a ferroelectric phase transition can be realized between two equivalent and eccentric ground stacking states with opposite polarizations. By means of first-principles calculations, taking stacked hexagonal boron nitride (h-BN/h-BN/h-BN) and h-BN/graphene/h-BN as feasible models, we carefully evaluated the magnitude of ferroelectricity. The corresponding polarizations were estimated as 1.83 and 1.35 pC/m, values that are comparable to those observed in sliding ferroelectricity. Devices using this tri-layer model of vertical ferroelectricity can be constructed using arbitrary van der Waals semiconducting materials, and these will usually have low switching barriers. It is highly likely that optimized material combinations with remarkable polarization will be discovered from the huge candidate set this provides for future information-storage applications.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0168454</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0001-8363-2991</orcidid><orcidid>https://orcid.org/0000-0003-3562-4537</orcidid><orcidid>https://orcid.org/0000-0003-1084-8294</orcidid><orcidid>https://orcid.org/0000-0002-9354-0502</orcidid><orcidid>https://orcid.org/0000-0003-3741-0444</orcidid><orcidid>https://orcid.org/0000-0002-5779-3369</orcidid><orcidid>https://orcid.org/0000-0003-0748-4274</orcidid><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2023-10, Vol.123 (14)
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_5_0168454
source AIP Journals Complete; Alma/SFX Local Collection
subjects Applied physics
Boron nitride
Ferroelectric materials
Ferroelectricity
First principles
Graphene
Phase transitions
Stacking
title Vertical ferroelectricity in van der Waals materials: Models and devices
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-01T03%3A38%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Vertical%20ferroelectricity%20in%20van%20der%20Waals%20materials:%20Models%20and%20devices&rft.jtitle=Applied%20physics%20letters&rft.au=Zhang,%20Yuwen&rft.date=2023-10-02&rft.volume=123&rft.issue=14&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/5.0168454&rft_dat=%3Cproquest_cross%3E2871424529%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2871424529&rft_id=info:pmid/&rfr_iscdi=true