Multilevel resistance states in van der Waals multiferroic tunnel junctions above room temperature

Multiferroic tunnel junctions (MFTJs) comprised of magnetic electrodes and a ferroelectric tunnel barrier have been emerging as promising candidates for nonvolatile memory applications. The recently discovered above room-temperature van der Waals (vdW) ferromagnet Fe3GaTe2 and ferroelectric α-In2Se3...

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Veröffentlicht in:	Applied physics letters 2023-11, Vol.123 (19)
Hauptverfasser:	Zhang, Yuanxiang, Li, Xinlu, Sheng, Jichao, Yu, Shujie, Zhang, Jia, Su, Yurong
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Asymmetry Bilayers Electric fields Electrical junctions Ferroelectric materials Ferroelectricity Ferromagnetism First principles Magnetoresistance Magnetoresistivity Multiferroic materials Room temperature Tunnel junctions
Online-Zugang:	Volltext
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