Ionization coefficients and excess noise characteristics of AlInAsSb on an InP substrate

For short-wavelength infrared (SWIR) avalanche photodiodes, a separate absorption, charge, and multiplication design is widely used. AlInAsSb on an InP substrate is a potential multiplication layer with a lattice match to absorber candidates across the SWIR. Our new measurements demonstrate that AlI...

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Veröffentlicht in:	Applied physics letters 2023-09, Vol.123 (13)
Hauptverfasser:	Ronningen, T. J., Kodati, S. H., Jin, X., Lee, S., Jung, H., Tao, X., Lewis, H. I. J., Schwartz, M., Gajowski, N., Martyniuk, P., Guo, B., Jones, A. H., Campbell, J. C., Grein, C., David, J. P. R., Krishna, S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Avalanche diodes Dark current Electric fields High gain Ionization coefficients Multipliers Photodiodes Substrates
Online-Zugang:	Volltext
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