Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation
Strain-related piezoelectric polarization is detrimental to the radiative recombination efficiency for InGaN-based long wavelength micro-LEDs. In this paper, partial strain relaxation of InGaN multiple quantum wells (MQWs) on the wafer scale has been demonstrated by adopting a partially relaxed InGa...
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description | Strain-related piezoelectric polarization is detrimental to the radiative recombination efficiency for InGaN-based long wavelength micro-LEDs. In this paper, partial strain relaxation of InGaN multiple quantum wells (MQWs) on the wafer scale has been demonstrated by adopting a partially relaxed InGaN superlattice (SL) as the pseudo-substrate. Such a pseudo-substrate was obtained through an electro-chemical etching method, in which a sub-surface InGaN/InGaN superlattice was etched via threading dislocations acting as etching channels. The degree of strain relaxation in MQWs was studied by x-ray reciprocal space mapping, which shows an increase of the in-plane lattice constant with the increase of etching voltage used in fabricating the pseudo-substrate. The reduced strain in the InGaN SL pseudo-substrate was demonstrated to be transferable to InGaN MQWs grown on top of it, and the engineering of the degree of strain relaxation via porosification was achieved. The highest relaxation degree of 44.7% was achieved in the sample with the porous InGaN SL template etched under the highest etching voltage. Morphological and structural properties of partially relaxed InGaN MQWs samples were investigated with the combination of atomic force and transmission electron microscopy. The increased porosity of the InGaN SL template and the newly formed small V-pits during QW growth are suggested as possible origins for the increased strain relaxation of InGaN MQWs. |
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In this paper, partial strain relaxation of InGaN multiple quantum wells (MQWs) on the wafer scale has been demonstrated by adopting a partially relaxed InGaN superlattice (SL) as the pseudo-substrate. Such a pseudo-substrate was obtained through an electro-chemical etching method, in which a sub-surface InGaN/InGaN superlattice was etched via threading dislocations acting as etching channels. The degree of strain relaxation in MQWs was studied by x-ray reciprocal space mapping, which shows an increase of the in-plane lattice constant with the increase of etching voltage used in fabricating the pseudo-substrate. The reduced strain in the InGaN SL pseudo-substrate was demonstrated to be transferable to InGaN MQWs grown on top of it, and the engineering of the degree of strain relaxation via porosification was achieved. The highest relaxation degree of 44.7% was achieved in the sample with the porous InGaN SL template etched under the highest etching voltage. Morphological and structural properties of partially relaxed InGaN MQWs samples were investigated with the combination of atomic force and transmission electron microscopy. The increased porosity of the InGaN SL template and the newly formed small V-pits during QW growth are suggested as possible origins for the increased strain relaxation of InGaN MQWs.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/5.0165066</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Chemical etching ; Electric potential ; Etching ; Indium gallium nitrides ; Lattice parameters ; Morphology ; Multi Quantum Wells ; Piezoelectricity ; Radiative recombination ; Strain relaxation ; Substrates ; Superlattices ; Threading dislocations ; Voltage</subject><ispartof>Journal of applied physics, 2023-10, Vol.134 (14)</ispartof><rights>Author(s)</rights><rights>2023 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c327t-7c656afbf5fbfbf4c1c7148b2a6127ad74bf663309463a3f522b657fe9e129713</citedby><cites>FETCH-LOGICAL-c327t-7c656afbf5fbfbf4c1c7148b2a6127ad74bf663309463a3f522b657fe9e129713</cites><orcidid>0009-0009-5326-4628 ; 0009-0000-5147-3447 ; 0000-0003-0029-3993 ; 0000-0001-5537-0058 ; 0000-0002-1726-3099 ; 0000-0002-4086-5979 ; 0000-0002-9481-8203 ; 0000-0003-3781-8212</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/5.0165066$$EHTML$$P50$$Gscitation$$Hfree_for_read</linktohtml><link.rule.ids>314,776,780,790,4498,27901,27902,76126</link.rule.ids></links><search><creatorcontrib>Ji, Yihong</creatorcontrib><creatorcontrib>Frentrup, Martin</creatorcontrib><creatorcontrib>Zhang, Xiaotian</creatorcontrib><creatorcontrib>Pongrácz, Jakub</creatorcontrib><creatorcontrib>Fairclough, Simon M.</creatorcontrib><creatorcontrib>Liu, Yingjun</creatorcontrib><creatorcontrib>Zhu, Tongtong</creatorcontrib><creatorcontrib>Oliver, Rachel A.</creatorcontrib><title>Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation</title><title>Journal of applied physics</title><description>Strain-related piezoelectric polarization is detrimental to the radiative recombination efficiency for InGaN-based long wavelength micro-LEDs. In this paper, partial strain relaxation of InGaN multiple quantum wells (MQWs) on the wafer scale has been demonstrated by adopting a partially relaxed InGaN superlattice (SL) as the pseudo-substrate. Such a pseudo-substrate was obtained through an electro-chemical etching method, in which a sub-surface InGaN/InGaN superlattice was etched via threading dislocations acting as etching channels. The degree of strain relaxation in MQWs was studied by x-ray reciprocal space mapping, which shows an increase of the in-plane lattice constant with the increase of etching voltage used in fabricating the pseudo-substrate. The reduced strain in the InGaN SL pseudo-substrate was demonstrated to be transferable to InGaN MQWs grown on top of it, and the engineering of the degree of strain relaxation via porosification was achieved. The highest relaxation degree of 44.7% was achieved in the sample with the porous InGaN SL template etched under the highest etching voltage. Morphological and structural properties of partially relaxed InGaN MQWs samples were investigated with the combination of atomic force and transmission electron microscopy. The increased porosity of the InGaN SL template and the newly formed small V-pits during QW growth are suggested as possible origins for the increased strain relaxation of InGaN MQWs.</description><subject>Chemical etching</subject><subject>Electric potential</subject><subject>Etching</subject><subject>Indium gallium nitrides</subject><subject>Lattice parameters</subject><subject>Morphology</subject><subject>Multi Quantum Wells</subject><subject>Piezoelectricity</subject><subject>Radiative recombination</subject><subject>Strain relaxation</subject><subject>Substrates</subject><subject>Superlattices</subject><subject>Threading dislocations</subject><subject>Voltage</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNp9kEtPwzAQhC0EEqVw4B9Y4gRqih-xHXNDFZRK5XGAc-QkdpsqjVM_1Pbfk9KeOaxGK32zqxkAbjEaY8TpIxsjzBni_AwMMMpkIhhD52CAEMFJJoW8BFferxDCOKNyAKov62z0sPM6VjbxsfDBqaA9NNbBWTtVH3ATVRviGm5108CFs9uwfILv1nVL29jFfgR7SyxDdHoEVVsdVlW30OlG7VSobXsNLoxqvL456RD8vL58T96S-ed0NnmeJyUlIiSi5IwrUxjWT2HSEpcCp1lBFMdEqEqkheGcUiRTThU1jJCCM2G01JhIgekQ3B3vds5uovYhX9no2v5lTjLBsGAoJT11f6RKZ7132uSdq9fK7XOM8kOJOctPJfbsw5H1ZR3-svwD_wJdXHIs</recordid><startdate>20231014</startdate><enddate>20231014</enddate><creator>Ji, Yihong</creator><creator>Frentrup, Martin</creator><creator>Zhang, Xiaotian</creator><creator>Pongrácz, Jakub</creator><creator>Fairclough, Simon M.</creator><creator>Liu, Yingjun</creator><creator>Zhu, Tongtong</creator><creator>Oliver, Rachel A.</creator><general>American Institute of Physics</general><scope>AJDQP</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0009-0009-5326-4628</orcidid><orcidid>https://orcid.org/0009-0000-5147-3447</orcidid><orcidid>https://orcid.org/0000-0003-0029-3993</orcidid><orcidid>https://orcid.org/0000-0001-5537-0058</orcidid><orcidid>https://orcid.org/0000-0002-1726-3099</orcidid><orcidid>https://orcid.org/0000-0002-4086-5979</orcidid><orcidid>https://orcid.org/0000-0002-9481-8203</orcidid><orcidid>https://orcid.org/0000-0003-3781-8212</orcidid></search><sort><creationdate>20231014</creationdate><title>Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation</title><author>Ji, Yihong ; Frentrup, Martin ; Zhang, Xiaotian ; Pongrácz, Jakub ; Fairclough, Simon M. ; Liu, Yingjun ; Zhu, Tongtong ; Oliver, Rachel A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-7c656afbf5fbfbf4c1c7148b2a6127ad74bf663309463a3f522b657fe9e129713</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Chemical etching</topic><topic>Electric potential</topic><topic>Etching</topic><topic>Indium gallium nitrides</topic><topic>Lattice parameters</topic><topic>Morphology</topic><topic>Multi Quantum Wells</topic><topic>Piezoelectricity</topic><topic>Radiative recombination</topic><topic>Strain relaxation</topic><topic>Substrates</topic><topic>Superlattices</topic><topic>Threading dislocations</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ji, Yihong</creatorcontrib><creatorcontrib>Frentrup, Martin</creatorcontrib><creatorcontrib>Zhang, Xiaotian</creatorcontrib><creatorcontrib>Pongrácz, Jakub</creatorcontrib><creatorcontrib>Fairclough, Simon M.</creatorcontrib><creatorcontrib>Liu, Yingjun</creatorcontrib><creatorcontrib>Zhu, Tongtong</creatorcontrib><creatorcontrib>Oliver, Rachel A.</creatorcontrib><collection>AIP Open Access Journals</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ji, Yihong</au><au>Frentrup, Martin</au><au>Zhang, Xiaotian</au><au>Pongrácz, Jakub</au><au>Fairclough, Simon M.</au><au>Liu, Yingjun</au><au>Zhu, Tongtong</au><au>Oliver, Rachel A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation</atitle><jtitle>Journal of applied physics</jtitle><date>2023-10-14</date><risdate>2023</risdate><volume>134</volume><issue>14</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Strain-related piezoelectric polarization is detrimental to the radiative recombination efficiency for InGaN-based long wavelength micro-LEDs. In this paper, partial strain relaxation of InGaN multiple quantum wells (MQWs) on the wafer scale has been demonstrated by adopting a partially relaxed InGaN superlattice (SL) as the pseudo-substrate. Such a pseudo-substrate was obtained through an electro-chemical etching method, in which a sub-surface InGaN/InGaN superlattice was etched via threading dislocations acting as etching channels. The degree of strain relaxation in MQWs was studied by x-ray reciprocal space mapping, which shows an increase of the in-plane lattice constant with the increase of etching voltage used in fabricating the pseudo-substrate. The reduced strain in the InGaN SL pseudo-substrate was demonstrated to be transferable to InGaN MQWs grown on top of it, and the engineering of the degree of strain relaxation via porosification was achieved. The highest relaxation degree of 44.7% was achieved in the sample with the porous InGaN SL template etched under the highest etching voltage. Morphological and structural properties of partially relaxed InGaN MQWs samples were investigated with the combination of atomic force and transmission electron microscopy. The increased porosity of the InGaN SL template and the newly formed small V-pits during QW growth are suggested as possible origins for the increased strain relaxation of InGaN MQWs.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0165066</doi><tpages>10</tpages><orcidid>https://orcid.org/0009-0009-5326-4628</orcidid><orcidid>https://orcid.org/0009-0000-5147-3447</orcidid><orcidid>https://orcid.org/0000-0003-0029-3993</orcidid><orcidid>https://orcid.org/0000-0001-5537-0058</orcidid><orcidid>https://orcid.org/0000-0002-1726-3099</orcidid><orcidid>https://orcid.org/0000-0002-4086-5979</orcidid><orcidid>https://orcid.org/0000-0002-9481-8203</orcidid><orcidid>https://orcid.org/0000-0003-3781-8212</orcidid><oa>free_for_read</oa></addata></record> |
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subjects | Chemical etching Electric potential Etching Indium gallium nitrides Lattice parameters Morphology Multi Quantum Wells Piezoelectricity Radiative recombination Strain relaxation Substrates Superlattices Threading dislocations Voltage |
title | Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation |
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