Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation

Strain-related piezoelectric polarization is detrimental to the radiative recombination efficiency for InGaN-based long wavelength micro-LEDs. In this paper, partial strain relaxation of InGaN multiple quantum wells (MQWs) on the wafer scale has been demonstrated by adopting a partially relaxed InGa...

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Veröffentlicht in:Journal of applied physics 2023-10, Vol.134 (14)
Hauptverfasser: Ji, Yihong, Frentrup, Martin, Zhang, Xiaotian, Pongrácz, Jakub, Fairclough, Simon M., Liu, Yingjun, Zhu, Tongtong, Oliver, Rachel A.
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container_issue 14
container_start_page
container_title Journal of applied physics
container_volume 134
creator Ji, Yihong
Frentrup, Martin
Zhang, Xiaotian
Pongrácz, Jakub
Fairclough, Simon M.
Liu, Yingjun
Zhu, Tongtong
Oliver, Rachel A.
description Strain-related piezoelectric polarization is detrimental to the radiative recombination efficiency for InGaN-based long wavelength micro-LEDs. In this paper, partial strain relaxation of InGaN multiple quantum wells (MQWs) on the wafer scale has been demonstrated by adopting a partially relaxed InGaN superlattice (SL) as the pseudo-substrate. Such a pseudo-substrate was obtained through an electro-chemical etching method, in which a sub-surface InGaN/InGaN superlattice was etched via threading dislocations acting as etching channels. The degree of strain relaxation in MQWs was studied by x-ray reciprocal space mapping, which shows an increase of the in-plane lattice constant with the increase of etching voltage used in fabricating the pseudo-substrate. The reduced strain in the InGaN SL pseudo-substrate was demonstrated to be transferable to InGaN MQWs grown on top of it, and the engineering of the degree of strain relaxation via porosification was achieved. The highest relaxation degree of 44.7% was achieved in the sample with the porous InGaN SL template etched under the highest etching voltage. Morphological and structural properties of partially relaxed InGaN MQWs samples were investigated with the combination of atomic force and transmission electron microscopy. The increased porosity of the InGaN SL template and the newly formed small V-pits during QW growth are suggested as possible origins for the increased strain relaxation of InGaN MQWs.
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In this paper, partial strain relaxation of InGaN multiple quantum wells (MQWs) on the wafer scale has been demonstrated by adopting a partially relaxed InGaN superlattice (SL) as the pseudo-substrate. Such a pseudo-substrate was obtained through an electro-chemical etching method, in which a sub-surface InGaN/InGaN superlattice was etched via threading dislocations acting as etching channels. The degree of strain relaxation in MQWs was studied by x-ray reciprocal space mapping, which shows an increase of the in-plane lattice constant with the increase of etching voltage used in fabricating the pseudo-substrate. The reduced strain in the InGaN SL pseudo-substrate was demonstrated to be transferable to InGaN MQWs grown on top of it, and the engineering of the degree of strain relaxation via porosification was achieved. The highest relaxation degree of 44.7% was achieved in the sample with the porous InGaN SL template etched under the highest etching voltage. Morphological and structural properties of partially relaxed InGaN MQWs samples were investigated with the combination of atomic force and transmission electron microscopy. The increased porosity of the InGaN SL template and the newly formed small V-pits during QW growth are suggested as possible origins for the increased strain relaxation of InGaN MQWs.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/5.0165066</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Chemical etching ; Electric potential ; Etching ; Indium gallium nitrides ; Lattice parameters ; Morphology ; Multi Quantum Wells ; Piezoelectricity ; Radiative recombination ; Strain relaxation ; Substrates ; Superlattices ; Threading dislocations ; Voltage</subject><ispartof>Journal of applied physics, 2023-10, Vol.134 (14)</ispartof><rights>Author(s)</rights><rights>2023 Author(s). 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Morphological and structural properties of partially relaxed InGaN MQWs samples were investigated with the combination of atomic force and transmission electron microscopy. 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subjects Chemical etching
Electric potential
Etching
Indium gallium nitrides
Lattice parameters
Morphology
Multi Quantum Wells
Piezoelectricity
Radiative recombination
Strain relaxation
Substrates
Superlattices
Threading dislocations
Voltage
title Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation
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