Electrical characteristics of in situ Mg-doped β-Ga2O3 current-blocking layer for vertical devices

The lack of p-type doping has impeded the development of vertical gallium oxide (Ga2O3) devices. Current blocking layers (CBLs) using implanted deep acceptors have been used to demonstrate vertical devices. This paper presents a pioneering demonstration of in situ Mg-doped β-Ga2O3 CBLs grown using m...

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Veröffentlicht in:	Applied physics letters 2023-09, Vol.123 (13)
Hauptverfasser:	Saha, Sudipto, Meng, Lingyu, Bhuiyan, A. F. M. Anhar Uddin, Sharma, Ankit, Saha, Chinmoy Nath, Zhao, Hongping, Singisetti, Uttam
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Density Doping Electrical measurement Field strength Gallium oxides Magnesium Metalorganic chemical vapor deposition Optimization Organic chemicals Organic chemistry Secondary ion mass spectroscopy Temperature dependence
Online-Zugang:	Volltext
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