Understanding ovonic threshold switching of GeSe chalcogenide materials using electrical methodologies for extracting density of states
As trap-related conduction is crucial in achieving ovonic threshold switching characteristics, identifying the distribution of traps in the chalcogenide matrix is essential. Herein, the density of states (DOS) near the valence band maximum level (EV) and conduction band minimum level (EC) of GeSe la...
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Veröffentlicht in: | Applied physics letters 2023-08, Vol.123 (7) |
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creator | Kim, Donguk Yang, Tae Jun Choi, Woo Sik Lee, Hee Jun Jang, Jun Tae Hong, Eunryeong Yang, Woo Young Choi, Minwoo Yang, Ki Yeon Lee, Chang Seung Woo, Jiyong Kim, Dae Hwan |
description | As trap-related conduction is crucial in achieving ovonic threshold switching characteristics, identifying the distribution of traps in the chalcogenide matrix is essential. Herein, the density of states (DOS) near the valence band maximum level (EV) and conduction band minimum level (EC) of GeSe layers extracted using various electrical methodologies were analyzed. When electrons in the GeSe layer participate in activation under light injection, the DOS distribution at EV can be calculated. On the other hand, capacitance measurement with respect to frequencies allows the identification of the lowest energy levels of EC containing electrons that can respond to the provided AC signals. When an As dopant is introduced into the GeSe layer, the unified DOS distribution indicates a decrease in the Se element concentration owing to the over-coordinated Ge state. Therefore, increased DOS at EC is observed, which is in good agreement with the ab initio explanation. Additional simulations were performed considering plausible scenarios in which the variation in DOS profile depends on the parameters of the transport mechanism. These results reveal the ways in which threshold switching can be controlled and facilitate the understanding of electrically achieved behavior. |
doi_str_mv | 10.1063/5.0153403 |
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Herein, the density of states (DOS) near the valence band maximum level (EV) and conduction band minimum level (EC) of GeSe layers extracted using various electrical methodologies were analyzed. When electrons in the GeSe layer participate in activation under light injection, the DOS distribution at EV can be calculated. On the other hand, capacitance measurement with respect to frequencies allows the identification of the lowest energy levels of EC containing electrons that can respond to the provided AC signals. When an As dopant is introduced into the GeSe layer, the unified DOS distribution indicates a decrease in the Se element concentration owing to the over-coordinated Ge state. Therefore, increased DOS at EC is observed, which is in good agreement with the ab initio explanation. Additional simulations were performed considering plausible scenarios in which the variation in DOS profile depends on the parameters of the transport mechanism. These results reveal the ways in which threshold switching can be controlled and facilitate the understanding of electrically achieved behavior.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0153403</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Chalcogenides ; Conduction bands ; Density of states ; Electrons ; Energy levels ; Mathematical analysis ; Switching ; Valence band</subject><ispartof>Applied physics letters, 2023-08, Vol.123 (7)</ispartof><rights>Author(s)</rights><rights>2023 Author(s). Published under an exclusive license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c287t-b5cec5e8892892580f3a76a5931c2cbf1038e43adc6290d6423f648a5e872d143</cites><orcidid>0000-0002-4968-6985 ; 0000-0003-2567-4012 ; 0000-0001-8206-9690</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/5.0153403$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,784,794,4502,27915,27916,76145</link.rule.ids></links><search><creatorcontrib>Kim, Donguk</creatorcontrib><creatorcontrib>Yang, Tae Jun</creatorcontrib><creatorcontrib>Choi, Woo Sik</creatorcontrib><creatorcontrib>Lee, Hee Jun</creatorcontrib><creatorcontrib>Jang, Jun Tae</creatorcontrib><creatorcontrib>Hong, Eunryeong</creatorcontrib><creatorcontrib>Yang, Woo Young</creatorcontrib><creatorcontrib>Choi, Minwoo</creatorcontrib><creatorcontrib>Yang, Ki Yeon</creatorcontrib><creatorcontrib>Lee, Chang Seung</creatorcontrib><creatorcontrib>Woo, Jiyong</creatorcontrib><creatorcontrib>Kim, Dae Hwan</creatorcontrib><title>Understanding ovonic threshold switching of GeSe chalcogenide materials using electrical methodologies for extracting density of states</title><title>Applied physics letters</title><description>As trap-related conduction is crucial in achieving ovonic threshold switching characteristics, identifying the distribution of traps in the chalcogenide matrix is essential. Herein, the density of states (DOS) near the valence band maximum level (EV) and conduction band minimum level (EC) of GeSe layers extracted using various electrical methodologies were analyzed. When electrons in the GeSe layer participate in activation under light injection, the DOS distribution at EV can be calculated. On the other hand, capacitance measurement with respect to frequencies allows the identification of the lowest energy levels of EC containing electrons that can respond to the provided AC signals. When an As dopant is introduced into the GeSe layer, the unified DOS distribution indicates a decrease in the Se element concentration owing to the over-coordinated Ge state. Therefore, increased DOS at EC is observed, which is in good agreement with the ab initio explanation. Additional simulations were performed considering plausible scenarios in which the variation in DOS profile depends on the parameters of the transport mechanism. These results reveal the ways in which threshold switching can be controlled and facilitate the understanding of electrically achieved behavior.</description><subject>Applied physics</subject><subject>Chalcogenides</subject><subject>Conduction bands</subject><subject>Density of states</subject><subject>Electrons</subject><subject>Energy levels</subject><subject>Mathematical analysis</subject><subject>Switching</subject><subject>Valence band</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNp9kM9KAzEQxoMoWKsH3yDgSWFr_mx2s0cpWoWCB-15SZPZbsp2U5NU7RP42mZtz8LAMMxvvo_5ELqmZEJJwe_FhFDBc8JP0IiSssw4pfIUjQghPCsqQc_RRQjrNArG-Qj9LHoDPkTVG9uvsPt0vdU4th5C6zqDw5eNuv1bNXgGb4B1qzrtVtBbA3ijIniruoB3YYCgAx291arDG4itM65zKwsBN85j-I5e6ThwBvpg434QTd4RwiU6a5IMXB37GC2eHt-nz9n8dfYyfZhnmskyZkuhQQuQsmKphCQNV2WhRMWpZnrZUMIl5FwZXbCKmCJnvClyqdJJyQzN-RjdHHS33n3sIMR67Xa-T5Y1k4KkYpwk6vZAae9C8NDUW283yu9rSuoh51rUx5wTe3dgg7bpFev6f-BfIKd_aA</recordid><startdate>20230814</startdate><enddate>20230814</enddate><creator>Kim, Donguk</creator><creator>Yang, Tae Jun</creator><creator>Choi, Woo Sik</creator><creator>Lee, Hee Jun</creator><creator>Jang, Jun Tae</creator><creator>Hong, Eunryeong</creator><creator>Yang, Woo Young</creator><creator>Choi, Minwoo</creator><creator>Yang, Ki Yeon</creator><creator>Lee, Chang Seung</creator><creator>Woo, Jiyong</creator><creator>Kim, Dae Hwan</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-4968-6985</orcidid><orcidid>https://orcid.org/0000-0003-2567-4012</orcidid><orcidid>https://orcid.org/0000-0001-8206-9690</orcidid></search><sort><creationdate>20230814</creationdate><title>Understanding ovonic threshold switching of GeSe chalcogenide materials using electrical methodologies for extracting density of states</title><author>Kim, Donguk ; Yang, Tae Jun ; Choi, Woo Sik ; Lee, Hee Jun ; Jang, Jun Tae ; Hong, Eunryeong ; Yang, Woo Young ; Choi, Minwoo ; Yang, Ki Yeon ; Lee, Chang Seung ; Woo, Jiyong ; Kim, Dae Hwan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c287t-b5cec5e8892892580f3a76a5931c2cbf1038e43adc6290d6423f648a5e872d143</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Applied physics</topic><topic>Chalcogenides</topic><topic>Conduction bands</topic><topic>Density of states</topic><topic>Electrons</topic><topic>Energy levels</topic><topic>Mathematical analysis</topic><topic>Switching</topic><topic>Valence band</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Donguk</creatorcontrib><creatorcontrib>Yang, Tae Jun</creatorcontrib><creatorcontrib>Choi, Woo Sik</creatorcontrib><creatorcontrib>Lee, Hee Jun</creatorcontrib><creatorcontrib>Jang, Jun Tae</creatorcontrib><creatorcontrib>Hong, Eunryeong</creatorcontrib><creatorcontrib>Yang, Woo Young</creatorcontrib><creatorcontrib>Choi, Minwoo</creatorcontrib><creatorcontrib>Yang, Ki Yeon</creatorcontrib><creatorcontrib>Lee, Chang Seung</creatorcontrib><creatorcontrib>Woo, Jiyong</creatorcontrib><creatorcontrib>Kim, Dae Hwan</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Donguk</au><au>Yang, Tae Jun</au><au>Choi, Woo Sik</au><au>Lee, Hee Jun</au><au>Jang, Jun Tae</au><au>Hong, Eunryeong</au><au>Yang, Woo Young</au><au>Choi, Minwoo</au><au>Yang, Ki Yeon</au><au>Lee, Chang Seung</au><au>Woo, Jiyong</au><au>Kim, Dae Hwan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Understanding ovonic threshold switching of GeSe chalcogenide materials using electrical methodologies for extracting density of states</atitle><jtitle>Applied physics letters</jtitle><date>2023-08-14</date><risdate>2023</risdate><volume>123</volume><issue>7</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>As trap-related conduction is crucial in achieving ovonic threshold switching characteristics, identifying the distribution of traps in the chalcogenide matrix is essential. Herein, the density of states (DOS) near the valence band maximum level (EV) and conduction band minimum level (EC) of GeSe layers extracted using various electrical methodologies were analyzed. When electrons in the GeSe layer participate in activation under light injection, the DOS distribution at EV can be calculated. On the other hand, capacitance measurement with respect to frequencies allows the identification of the lowest energy levels of EC containing electrons that can respond to the provided AC signals. When an As dopant is introduced into the GeSe layer, the unified DOS distribution indicates a decrease in the Se element concentration owing to the over-coordinated Ge state. Therefore, increased DOS at EC is observed, which is in good agreement with the ab initio explanation. Additional simulations were performed considering plausible scenarios in which the variation in DOS profile depends on the parameters of the transport mechanism. These results reveal the ways in which threshold switching can be controlled and facilitate the understanding of electrically achieved behavior.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0153403</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-4968-6985</orcidid><orcidid>https://orcid.org/0000-0003-2567-4012</orcidid><orcidid>https://orcid.org/0000-0001-8206-9690</orcidid><oa>free_for_read</oa></addata></record> |
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subjects | Applied physics Chalcogenides Conduction bands Density of states Electrons Energy levels Mathematical analysis Switching Valence band |
title | Understanding ovonic threshold switching of GeSe chalcogenide materials using electrical methodologies for extracting density of states |
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