Improvement of channel-carrier mobility in 4H-SiC MOSFETs correlated with passivation of very fast interface traps using sodium enhanced oxidation

Very fast interface traps have recently been suggested to be the main cause behind the rather poor inversion channel mobility in nitrided SiC metal-oxide-semiconductor-field-effect-transistors (MOSFETs). Using capacitance voltage analysis and conductance spectroscopy on metal oxide semiconductor cap...

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Veröffentlicht in:	AIP advances 2023-05, Vol.13 (5), p.055126-055126-6
Hauptverfasser:	Vidarsson, Arnar M., Haasmann, Daniel, Dimitrijev, Sima, Sveinbjörnsson, Einar Ö.
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier mobility Cryogenic temperature Field effect transistors Metal oxide semiconductors MOSFETs Oxidation Semiconductor devices Silicon carbide Sodium
Online-Zugang:	Volltext
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