Accurate determination of band tail properties in amorphous semiconductor thin film with Kelvin probe force microscopy

The disordered microscopic structure of amorphous semiconductors causes the formation of band tails in the density of states (DOS) that strongly affect charge transport properties. Such band tail properties are crucial for understanding and optimizing thin-film device performance with immense releva...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:APL materials 2023-06, Vol.11 (6), p.061123-061123-8
Hauptverfasser: Fabbri, Luca, Bordoni, Camilla, Barquinha, Pedro, Crocco, Jerome, Fraboni, Beatrice, Cramer, Tobias
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 061123-8
container_issue 6
container_start_page 061123
container_title APL materials
container_volume 11
creator Fabbri, Luca
Bordoni, Camilla
Barquinha, Pedro
Crocco, Jerome
Fraboni, Beatrice
Cramer, Tobias
description The disordered microscopic structure of amorphous semiconductors causes the formation of band tails in the density of states (DOS) that strongly affect charge transport properties. Such band tail properties are crucial for understanding and optimizing thin-film device performance with immense relevance for large area electronics. Among the available techniques to measure the DOS, Kelvin Probe Force Microscopy (KPFM) is exceptional as it enables precise local electronic investigations combined with microscopic imaging. However, a model to interpret KPFM spectroscopy data on amorphous semiconductors of finite thickness is lacking. To address this issue, we provide an analytical solution to the Poisson equation for a metal–insulator–semiconductor junction interacting with the atomic force microscope tip. The solution enables us to fit experimental data for semiconductors with finite thickness and to obtain DOS parameters, such as band tail width, doping density, and flat band potential. To demonstrate our method, we perform KPFM experiments on Indium–Gallium–Zinc Oxide (IGZO) thin-film transistors (IGZO-TFTs). DOS parameters compare well with values obtained with photocurrent spectroscopy. We demonstrate the relevance of the developed method by investigating the impact of ionizing radiation on DOS parameters and TFT performance. Our results provide clear evidence that the observed shift in threshold voltage is caused by static charge in the gate dielectric, leading to a shift in flat band potential. Band-tails and doping density are not affected by the radiation. The developed methodology can be easily translated to different semiconductor materials and paves the way for quantitative microscopic mapping of local DOS parameters in thin-film devices.
doi_str_mv 10.1063/5.0151367
format Article
fullrecord <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_5_0151367</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><doaj_id>oai_doaj_org_article_8034efee1edd4e218468a6191d7a8f17</doaj_id><sourcerecordid>apm</sourcerecordid><originalsourceid>FETCH-LOGICAL-c400t-5ee0a9f3d92a53e4d07e20dc79965a1929f47b2d2ceb89c7746692156b4a0d503</originalsourceid><addsrcrecordid>eNp9kE1LAzEQhhdRsGgP_oNcFar52GQ3Ryl-FAteFLyFbDKxkd3NkqSV_ntXW1QQPM0w88wD8xbFGcGXBAt2xS8x4YSJ6qCYUCLEjDP6cvirPy6mKb1hjAlmrJZiUmyujVlHnQFZyBA73-vsQ4-CQ43uLcrat2iIYYCYPSTke6S7EIdVWCeUoPMm9HZtcogor8al822H3n1eoQdoN-NgvG0AuRANoJGOIZkwbE-LI6fbBNN9PSmeb2-e5vez5ePdYn69nJkS4zzjAFhLx6ykmjMoLa6AYmsqKQXXRFLpyqqhlhpoammqqhRCUsJFU2psOWYnxWLntUG_qSH6TsetCtqrr0GIr0qPj5kWVI1ZCQ6AgLUlUFKXotaCSGIrXTtSja7znevziRTBffsIVp_5K672-Y_sxY5NxuevRL_hTYg_oBqs-w_-a_4As9uVsA</addsrcrecordid><sourcetype>Open Website</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Accurate determination of band tail properties in amorphous semiconductor thin film with Kelvin probe force microscopy</title><source>DOAJ Directory of Open Access Journals</source><source>Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals</source><creator>Fabbri, Luca ; Bordoni, Camilla ; Barquinha, Pedro ; Crocco, Jerome ; Fraboni, Beatrice ; Cramer, Tobias</creator><creatorcontrib>Fabbri, Luca ; Bordoni, Camilla ; Barquinha, Pedro ; Crocco, Jerome ; Fraboni, Beatrice ; Cramer, Tobias</creatorcontrib><description>The disordered microscopic structure of amorphous semiconductors causes the formation of band tails in the density of states (DOS) that strongly affect charge transport properties. Such band tail properties are crucial for understanding and optimizing thin-film device performance with immense relevance for large area electronics. Among the available techniques to measure the DOS, Kelvin Probe Force Microscopy (KPFM) is exceptional as it enables precise local electronic investigations combined with microscopic imaging. However, a model to interpret KPFM spectroscopy data on amorphous semiconductors of finite thickness is lacking. To address this issue, we provide an analytical solution to the Poisson equation for a metal–insulator–semiconductor junction interacting with the atomic force microscope tip. The solution enables us to fit experimental data for semiconductors with finite thickness and to obtain DOS parameters, such as band tail width, doping density, and flat band potential. To demonstrate our method, we perform KPFM experiments on Indium–Gallium–Zinc Oxide (IGZO) thin-film transistors (IGZO-TFTs). DOS parameters compare well with values obtained with photocurrent spectroscopy. We demonstrate the relevance of the developed method by investigating the impact of ionizing radiation on DOS parameters and TFT performance. Our results provide clear evidence that the observed shift in threshold voltage is caused by static charge in the gate dielectric, leading to a shift in flat band potential. Band-tails and doping density are not affected by the radiation. The developed methodology can be easily translated to different semiconductor materials and paves the way for quantitative microscopic mapping of local DOS parameters in thin-film devices.</description><identifier>ISSN: 2166-532X</identifier><identifier>EISSN: 2166-532X</identifier><identifier>DOI: 10.1063/5.0151367</identifier><identifier>CODEN: AMPADS</identifier><language>eng</language><publisher>AIP Publishing LLC</publisher><ispartof>APL materials, 2023-06, Vol.11 (6), p.061123-061123-8</ispartof><rights>Author(s)</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c400t-5ee0a9f3d92a53e4d07e20dc79965a1929f47b2d2ceb89c7746692156b4a0d503</citedby><cites>FETCH-LOGICAL-c400t-5ee0a9f3d92a53e4d07e20dc79965a1929f47b2d2ceb89c7746692156b4a0d503</cites><orcidid>0009-0000-1861-9029 ; 0000-0002-5446-2759 ; 0000-0002-4875-3816 ; 0000-0002-5993-3388 ; 0009-0003-6564-4747</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,865,2103,27929,27930</link.rule.ids></links><search><creatorcontrib>Fabbri, Luca</creatorcontrib><creatorcontrib>Bordoni, Camilla</creatorcontrib><creatorcontrib>Barquinha, Pedro</creatorcontrib><creatorcontrib>Crocco, Jerome</creatorcontrib><creatorcontrib>Fraboni, Beatrice</creatorcontrib><creatorcontrib>Cramer, Tobias</creatorcontrib><title>Accurate determination of band tail properties in amorphous semiconductor thin film with Kelvin probe force microscopy</title><title>APL materials</title><description>The disordered microscopic structure of amorphous semiconductors causes the formation of band tails in the density of states (DOS) that strongly affect charge transport properties. Such band tail properties are crucial for understanding and optimizing thin-film device performance with immense relevance for large area electronics. Among the available techniques to measure the DOS, Kelvin Probe Force Microscopy (KPFM) is exceptional as it enables precise local electronic investigations combined with microscopic imaging. However, a model to interpret KPFM spectroscopy data on amorphous semiconductors of finite thickness is lacking. To address this issue, we provide an analytical solution to the Poisson equation for a metal–insulator–semiconductor junction interacting with the atomic force microscope tip. The solution enables us to fit experimental data for semiconductors with finite thickness and to obtain DOS parameters, such as band tail width, doping density, and flat band potential. To demonstrate our method, we perform KPFM experiments on Indium–Gallium–Zinc Oxide (IGZO) thin-film transistors (IGZO-TFTs). DOS parameters compare well with values obtained with photocurrent spectroscopy. We demonstrate the relevance of the developed method by investigating the impact of ionizing radiation on DOS parameters and TFT performance. Our results provide clear evidence that the observed shift in threshold voltage is caused by static charge in the gate dielectric, leading to a shift in flat band potential. Band-tails and doping density are not affected by the radiation. The developed methodology can be easily translated to different semiconductor materials and paves the way for quantitative microscopic mapping of local DOS parameters in thin-film devices.</description><issn>2166-532X</issn><issn>2166-532X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>DOA</sourceid><recordid>eNp9kE1LAzEQhhdRsGgP_oNcFar52GQ3Ryl-FAteFLyFbDKxkd3NkqSV_ntXW1QQPM0w88wD8xbFGcGXBAt2xS8x4YSJ6qCYUCLEjDP6cvirPy6mKb1hjAlmrJZiUmyujVlHnQFZyBA73-vsQ4-CQ43uLcrat2iIYYCYPSTke6S7EIdVWCeUoPMm9HZtcogor8al822H3n1eoQdoN-NgvG0AuRANoJGOIZkwbE-LI6fbBNN9PSmeb2-e5vez5ePdYn69nJkS4zzjAFhLx6ykmjMoLa6AYmsqKQXXRFLpyqqhlhpoammqqhRCUsJFU2psOWYnxWLntUG_qSH6TsetCtqrr0GIr0qPj5kWVI1ZCQ6AgLUlUFKXotaCSGIrXTtSja7znevziRTBffsIVp_5K672-Y_sxY5NxuevRL_hTYg_oBqs-w_-a_4As9uVsA</recordid><startdate>20230601</startdate><enddate>20230601</enddate><creator>Fabbri, Luca</creator><creator>Bordoni, Camilla</creator><creator>Barquinha, Pedro</creator><creator>Crocco, Jerome</creator><creator>Fraboni, Beatrice</creator><creator>Cramer, Tobias</creator><general>AIP Publishing LLC</general><scope>AJDQP</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>DOA</scope><orcidid>https://orcid.org/0009-0000-1861-9029</orcidid><orcidid>https://orcid.org/0000-0002-5446-2759</orcidid><orcidid>https://orcid.org/0000-0002-4875-3816</orcidid><orcidid>https://orcid.org/0000-0002-5993-3388</orcidid><orcidid>https://orcid.org/0009-0003-6564-4747</orcidid></search><sort><creationdate>20230601</creationdate><title>Accurate determination of band tail properties in amorphous semiconductor thin film with Kelvin probe force microscopy</title><author>Fabbri, Luca ; Bordoni, Camilla ; Barquinha, Pedro ; Crocco, Jerome ; Fraboni, Beatrice ; Cramer, Tobias</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c400t-5ee0a9f3d92a53e4d07e20dc79965a1929f47b2d2ceb89c7746692156b4a0d503</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fabbri, Luca</creatorcontrib><creatorcontrib>Bordoni, Camilla</creatorcontrib><creatorcontrib>Barquinha, Pedro</creatorcontrib><creatorcontrib>Crocco, Jerome</creatorcontrib><creatorcontrib>Fraboni, Beatrice</creatorcontrib><creatorcontrib>Cramer, Tobias</creatorcontrib><collection>AIP Open Access Journals</collection><collection>CrossRef</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>APL materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Fabbri, Luca</au><au>Bordoni, Camilla</au><au>Barquinha, Pedro</au><au>Crocco, Jerome</au><au>Fraboni, Beatrice</au><au>Cramer, Tobias</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Accurate determination of band tail properties in amorphous semiconductor thin film with Kelvin probe force microscopy</atitle><jtitle>APL materials</jtitle><date>2023-06-01</date><risdate>2023</risdate><volume>11</volume><issue>6</issue><spage>061123</spage><epage>061123-8</epage><pages>061123-061123-8</pages><issn>2166-532X</issn><eissn>2166-532X</eissn><coden>AMPADS</coden><abstract>The disordered microscopic structure of amorphous semiconductors causes the formation of band tails in the density of states (DOS) that strongly affect charge transport properties. Such band tail properties are crucial for understanding and optimizing thin-film device performance with immense relevance for large area electronics. Among the available techniques to measure the DOS, Kelvin Probe Force Microscopy (KPFM) is exceptional as it enables precise local electronic investigations combined with microscopic imaging. However, a model to interpret KPFM spectroscopy data on amorphous semiconductors of finite thickness is lacking. To address this issue, we provide an analytical solution to the Poisson equation for a metal–insulator–semiconductor junction interacting with the atomic force microscope tip. The solution enables us to fit experimental data for semiconductors with finite thickness and to obtain DOS parameters, such as band tail width, doping density, and flat band potential. To demonstrate our method, we perform KPFM experiments on Indium–Gallium–Zinc Oxide (IGZO) thin-film transistors (IGZO-TFTs). DOS parameters compare well with values obtained with photocurrent spectroscopy. We demonstrate the relevance of the developed method by investigating the impact of ionizing radiation on DOS parameters and TFT performance. Our results provide clear evidence that the observed shift in threshold voltage is caused by static charge in the gate dielectric, leading to a shift in flat band potential. Band-tails and doping density are not affected by the radiation. The developed methodology can be easily translated to different semiconductor materials and paves the way for quantitative microscopic mapping of local DOS parameters in thin-film devices.</abstract><pub>AIP Publishing LLC</pub><doi>10.1063/5.0151367</doi><tpages>8</tpages><orcidid>https://orcid.org/0009-0000-1861-9029</orcidid><orcidid>https://orcid.org/0000-0002-5446-2759</orcidid><orcidid>https://orcid.org/0000-0002-4875-3816</orcidid><orcidid>https://orcid.org/0000-0002-5993-3388</orcidid><orcidid>https://orcid.org/0009-0003-6564-4747</orcidid><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 2166-532X
ispartof APL materials, 2023-06, Vol.11 (6), p.061123-061123-8
issn 2166-532X
2166-532X
language eng
recordid cdi_crossref_primary_10_1063_5_0151367
source DOAJ Directory of Open Access Journals; Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals
title Accurate determination of band tail properties in amorphous semiconductor thin film with Kelvin probe force microscopy
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-14T12%3A33%3A50IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Accurate%20determination%20of%20band%20tail%20properties%20in%20amorphous%20semiconductor%20thin%20film%20with%20Kelvin%20probe%20force%20microscopy&rft.jtitle=APL%20materials&rft.au=Fabbri,%20Luca&rft.date=2023-06-01&rft.volume=11&rft.issue=6&rft.spage=061123&rft.epage=061123-8&rft.pages=061123-061123-8&rft.issn=2166-532X&rft.eissn=2166-532X&rft.coden=AMPADS&rft_id=info:doi/10.1063/5.0151367&rft_dat=%3Cscitation_cross%3Eapm%3C/scitation_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_doaj_id=oai_doaj_org_article_8034efee1edd4e218468a6191d7a8f17&rfr_iscdi=true