Photon-counting with single stoichiometric TiN layer-based optical MKIDs

We demonstrate the single photon counting mode at 405 and 850 nm with stoichiometric TiN-based microwave kinetic inductance detectors realized on a sapphire substrate and operated at bath temperatures over 300 mK. The detectors use single 15–25 nm-thick TiN layers featuring a critical temperature in...

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Veröffentlicht in:	Applied physics letters 2023-05, Vol.122 (21)
Hauptverfasser:	Boussaha, Faouzi, Hu, Jie, Nicaise, Paul, Martin, Jean-Marc, Chaumont, Christine, Dung, Pham Viet, Firminy, Josiane, Reix, Florent, Bonifacio, Piercarlo, Piat, Michel, Geoffray, Hervé
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Critical temperature Detectors High temperature Inductance Photons Physics Resolution Sapphire Stoichiometry Substrates Titanium nitride Transition temperature
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