Mapping the impact of defect distributions in silicon carbide devices using the edge transient-current technique

We demonstrate that the multi-photon absorption edge transient-current technique (edge-TCT) can be used to three-dimensionally map the impact of defect distributions on device characteristics in situ inside the bulk of silicon carbide devices. A ∼5 μm wide defect-rich layer induced by proton irradia...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics letters 2023-05, Vol.122 (18)
Hauptverfasser:	Dorfer, Christian, Bathen, Marianne E., Race, Salvatore, Kumar, Piyush, Tsibizov, Alexander, Woerle, Judith, Grossner, Ulrike
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Current carriers Defects Mapping Multiphoton absorption Proton irradiation Semiconductor devices Silicon carbide Space charge Transient current
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!