Local electric field perturbations due to trapping mechanisms at defects: What random telegraph noise reveals

As devices scale closer to the atomic size, a complete understanding of the physical mechanisms involving defects in high-κ dielectrics is essential to improve the performance of electron devices and to mitigate key reliability phenomena, such as Random Telegraph Noise (RTN). In fact, crucial aspect...

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Veröffentlicht in:	Journal of applied physics 2023-03, Vol.133 (11)
Hauptverfasser:	Vecchi, Sara, Pavan, Paolo, Puglisi, Francesco Maria
Format:	Artikel
Sprache:	eng
Schlagworte:	Bias Charge transport Defects Electric fields Hafnium oxide Information retrieval Metastable state Oxygen ions Perturbation Reliability aspects Trapped charge Trapping
Online-Zugang:	Volltext
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