Low leakage current in isolated AlGaN/GaN heterostructure on Si substrate by N ion implantation performed at an elevated temperature

Electrical characterizations of AlGaN/GaN heterojunctions isolated by N implantation at elevated temperatures were investigated. Three-terminal measurements were carried out to characterize leakage paths, and crystal lattice damage due to implantation was monitored by high-resolution x-ray diffracti...

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