Reversible total ionizing dose effects in NiO/Ga2O3 heterojunction rectifiers
NiO/Ga2O3 heterojunction rectifiers were exposed to 1 Mrad fluences of Co-60 γ-rays either with or without reverse biases. While there is a small component of Compton electrons (600 keV), generated via the interaction of 1.17 and 1.33 MeV gamma photons with the semiconductor, which in turn can lead...
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| Veröffentlicht in: | Journal of applied physics 2023-01, Vol.133 (1) |
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| container_title | Journal of applied physics |
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| creator | Li, Jian-Sian Chiang, Chao-Ching Xia, Xinyi Stepanoff, Sergei Haque, Aman Wolfe, Douglas E. Ren, Fan Pearton, S. J. |
| description | NiO/Ga2O3 heterojunction rectifiers were exposed to 1 Mrad fluences of Co-60 γ-rays either with or without reverse biases. While there is a small component of Compton electrons (600 keV), generated via the interaction of 1.17 and 1.33 MeV gamma photons with the semiconductor, which in turn can lead to displacement damage, most of the energy is lost to ionization. The effect of the exposure to radiation is a 1000× reduction in forward current and a 100× increase in reverse current in the rectifiers, which is independent of whether the devices were biased during this step. The on–off ratio is also reduced by almost five orders of magnitude. There is a slight reduction in carrier concentration in the Ga2O3 drift region, with an effective carrier removal rate of |
| doi_str_mv | 10.1063/5.0134823 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_5_0134823</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2760279379</sourcerecordid><originalsourceid>FETCH-LOGICAL-c292t-bec3dd584bcb1126c29bf42f6493d58adceddcc8b8d850ee7ec70dfbbd9a6c413</originalsourceid><addsrcrecordid>eNp90E1LAzEQBuAgCtbqwX8Q8KSwbT72IzlK0SpUC6LnsEkmmlI3NUkL-uvd0qIHQRgYGB7eYQahc0pGlNR8XI0I5aVg_AANKBGyaKqKHKIBIYwWQjbyGJ2ktCCEUsHlAD08wQZi8noJOIfcLrEPnf_y3Su2IQEG58DkhH2HH_18PG3ZnOM3yBDDYt2Z3Gsce-Gd72NO0ZFrlwnO9n2IXm5vnid3xWw-vZ9czwrDJMuFBsOtrUSpjaaU1f1Uu5K5upS8H7fWgLXGCC2sqAhAA6Yh1mltZVubkvIhutjlrmL4WEPKahHWsetXKtbUhDWS9zVElztlYkgpglOr6N_b-KkoUdtvqUrtv9Xbq51Nxud2e9YP3oT4C9XKuv_w3-RvNzJ5iw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2760279379</pqid></control><display><type>article</type><title>Reversible total ionizing dose effects in NiO/Ga2O3 heterojunction rectifiers</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Li, Jian-Sian ; Chiang, Chao-Ching ; Xia, Xinyi ; Stepanoff, Sergei ; Haque, Aman ; Wolfe, Douglas E. ; Ren, Fan ; Pearton, S. J.</creator><creatorcontrib>Li, Jian-Sian ; Chiang, Chao-Ching ; Xia, Xinyi ; Stepanoff, Sergei ; Haque, Aman ; Wolfe, Douglas E. ; Ren, Fan ; Pearton, S. J.</creatorcontrib><description>NiO/Ga2O3 heterojunction rectifiers were exposed to 1 Mrad fluences of Co-60 γ-rays either with or without reverse biases. While there is a small component of Compton electrons (600 keV), generated via the interaction of 1.17 and 1.33 MeV gamma photons with the semiconductor, which in turn can lead to displacement damage, most of the energy is lost to ionization. The effect of the exposure to radiation is a 1000× reduction in forward current and a 100× increase in reverse current in the rectifiers, which is independent of whether the devices were biased during this step. The on–off ratio is also reduced by almost five orders of magnitude. There is a slight reduction in carrier concentration in the Ga2O3 drift region, with an effective carrier removal rate of <4 cm−1. The changes in electrical characteristics are reversible by application of short forward current pulses during repeated measurement of the current–voltage characteristics at room temperature. There are no permanent total ionizing dose effects present in the rectifiers to 1 Mad fluences, which along with their resistance to displacement damage effects indicate that these devices may be well-suited to harsh terrestrial and space radiation applications if appropriate bias sequences are implemented to reverse the radiation-induced changes.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/5.0134823</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Carrier density ; Current pulses ; Current voltage characteristics ; Damage ; Extraterrestrial radiation ; Gallium oxides ; Gamma rays ; Heterojunctions ; Nickel oxides ; Radiation ; Radiation effects ; Rectifiers ; Reduction ; Room temperature</subject><ispartof>Journal of applied physics, 2023-01, Vol.133 (1)</ispartof><rights>Author(s)</rights><rights>2023 Author(s). Published under an exclusive license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c292t-bec3dd584bcb1126c29bf42f6493d58adceddcc8b8d850ee7ec70dfbbd9a6c413</citedby><cites>FETCH-LOGICAL-c292t-bec3dd584bcb1126c29bf42f6493d58adceddcc8b8d850ee7ec70dfbbd9a6c413</cites><orcidid>0000-0002-5727-4358 ; 0000-0001-6498-1256 ; 0000-0002-2817-7612 ; 0000-0002-8644-8599 ; 0000-0002-0447-8170 ; 0000-0001-9234-019X ; 0000-0001-6535-5484</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/5.0134823$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,784,794,4512,27924,27925,76384</link.rule.ids></links><search><creatorcontrib>Li, Jian-Sian</creatorcontrib><creatorcontrib>Chiang, Chao-Ching</creatorcontrib><creatorcontrib>Xia, Xinyi</creatorcontrib><creatorcontrib>Stepanoff, Sergei</creatorcontrib><creatorcontrib>Haque, Aman</creatorcontrib><creatorcontrib>Wolfe, Douglas E.</creatorcontrib><creatorcontrib>Ren, Fan</creatorcontrib><creatorcontrib>Pearton, S. J.</creatorcontrib><title>Reversible total ionizing dose effects in NiO/Ga2O3 heterojunction rectifiers</title><title>Journal of applied physics</title><description>NiO/Ga2O3 heterojunction rectifiers were exposed to 1 Mrad fluences of Co-60 γ-rays either with or without reverse biases. While there is a small component of Compton electrons (600 keV), generated via the interaction of 1.17 and 1.33 MeV gamma photons with the semiconductor, which in turn can lead to displacement damage, most of the energy is lost to ionization. The effect of the exposure to radiation is a 1000× reduction in forward current and a 100× increase in reverse current in the rectifiers, which is independent of whether the devices were biased during this step. The on–off ratio is also reduced by almost five orders of magnitude. There is a slight reduction in carrier concentration in the Ga2O3 drift region, with an effective carrier removal rate of <4 cm−1. The changes in electrical characteristics are reversible by application of short forward current pulses during repeated measurement of the current–voltage characteristics at room temperature. There are no permanent total ionizing dose effects present in the rectifiers to 1 Mad fluences, which along with their resistance to displacement damage effects indicate that these devices may be well-suited to harsh terrestrial and space radiation applications if appropriate bias sequences are implemented to reverse the radiation-induced changes.</description><subject>Applied physics</subject><subject>Carrier density</subject><subject>Current pulses</subject><subject>Current voltage characteristics</subject><subject>Damage</subject><subject>Extraterrestrial radiation</subject><subject>Gallium oxides</subject><subject>Gamma rays</subject><subject>Heterojunctions</subject><subject>Nickel oxides</subject><subject>Radiation</subject><subject>Radiation effects</subject><subject>Rectifiers</subject><subject>Reduction</subject><subject>Room temperature</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNp90E1LAzEQBuAgCtbqwX8Q8KSwbT72IzlK0SpUC6LnsEkmmlI3NUkL-uvd0qIHQRgYGB7eYQahc0pGlNR8XI0I5aVg_AANKBGyaKqKHKIBIYwWQjbyGJ2ktCCEUsHlAD08wQZi8noJOIfcLrEPnf_y3Su2IQEG58DkhH2HH_18PG3ZnOM3yBDDYt2Z3Gsce-Gd72NO0ZFrlwnO9n2IXm5vnid3xWw-vZ9czwrDJMuFBsOtrUSpjaaU1f1Uu5K5upS8H7fWgLXGCC2sqAhAA6Yh1mltZVubkvIhutjlrmL4WEPKahHWsetXKtbUhDWS9zVElztlYkgpglOr6N_b-KkoUdtvqUrtv9Xbq51Nxud2e9YP3oT4C9XKuv_w3-RvNzJ5iw</recordid><startdate>20230107</startdate><enddate>20230107</enddate><creator>Li, Jian-Sian</creator><creator>Chiang, Chao-Ching</creator><creator>Xia, Xinyi</creator><creator>Stepanoff, Sergei</creator><creator>Haque, Aman</creator><creator>Wolfe, Douglas E.</creator><creator>Ren, Fan</creator><creator>Pearton, S. J.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-5727-4358</orcidid><orcidid>https://orcid.org/0000-0001-6498-1256</orcidid><orcidid>https://orcid.org/0000-0002-2817-7612</orcidid><orcidid>https://orcid.org/0000-0002-8644-8599</orcidid><orcidid>https://orcid.org/0000-0002-0447-8170</orcidid><orcidid>https://orcid.org/0000-0001-9234-019X</orcidid><orcidid>https://orcid.org/0000-0001-6535-5484</orcidid></search><sort><creationdate>20230107</creationdate><title>Reversible total ionizing dose effects in NiO/Ga2O3 heterojunction rectifiers</title><author>Li, Jian-Sian ; Chiang, Chao-Ching ; Xia, Xinyi ; Stepanoff, Sergei ; Haque, Aman ; Wolfe, Douglas E. ; Ren, Fan ; Pearton, S. J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c292t-bec3dd584bcb1126c29bf42f6493d58adceddcc8b8d850ee7ec70dfbbd9a6c413</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Applied physics</topic><topic>Carrier density</topic><topic>Current pulses</topic><topic>Current voltage characteristics</topic><topic>Damage</topic><topic>Extraterrestrial radiation</topic><topic>Gallium oxides</topic><topic>Gamma rays</topic><topic>Heterojunctions</topic><topic>Nickel oxides</topic><topic>Radiation</topic><topic>Radiation effects</topic><topic>Rectifiers</topic><topic>Reduction</topic><topic>Room temperature</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, Jian-Sian</creatorcontrib><creatorcontrib>Chiang, Chao-Ching</creatorcontrib><creatorcontrib>Xia, Xinyi</creatorcontrib><creatorcontrib>Stepanoff, Sergei</creatorcontrib><creatorcontrib>Haque, Aman</creatorcontrib><creatorcontrib>Wolfe, Douglas E.</creatorcontrib><creatorcontrib>Ren, Fan</creatorcontrib><creatorcontrib>Pearton, S. J.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li, Jian-Sian</au><au>Chiang, Chao-Ching</au><au>Xia, Xinyi</au><au>Stepanoff, Sergei</au><au>Haque, Aman</au><au>Wolfe, Douglas E.</au><au>Ren, Fan</au><au>Pearton, S. J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Reversible total ionizing dose effects in NiO/Ga2O3 heterojunction rectifiers</atitle><jtitle>Journal of applied physics</jtitle><date>2023-01-07</date><risdate>2023</risdate><volume>133</volume><issue>1</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>NiO/Ga2O3 heterojunction rectifiers were exposed to 1 Mrad fluences of Co-60 γ-rays either with or without reverse biases. While there is a small component of Compton electrons (600 keV), generated via the interaction of 1.17 and 1.33 MeV gamma photons with the semiconductor, which in turn can lead to displacement damage, most of the energy is lost to ionization. The effect of the exposure to radiation is a 1000× reduction in forward current and a 100× increase in reverse current in the rectifiers, which is independent of whether the devices were biased during this step. The on–off ratio is also reduced by almost five orders of magnitude. There is a slight reduction in carrier concentration in the Ga2O3 drift region, with an effective carrier removal rate of <4 cm−1. The changes in electrical characteristics are reversible by application of short forward current pulses during repeated measurement of the current–voltage characteristics at room temperature. There are no permanent total ionizing dose effects present in the rectifiers to 1 Mad fluences, which along with their resistance to displacement damage effects indicate that these devices may be well-suited to harsh terrestrial and space radiation applications if appropriate bias sequences are implemented to reverse the radiation-induced changes.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0134823</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-5727-4358</orcidid><orcidid>https://orcid.org/0000-0001-6498-1256</orcidid><orcidid>https://orcid.org/0000-0002-2817-7612</orcidid><orcidid>https://orcid.org/0000-0002-8644-8599</orcidid><orcidid>https://orcid.org/0000-0002-0447-8170</orcidid><orcidid>https://orcid.org/0000-0001-9234-019X</orcidid><orcidid>https://orcid.org/0000-0001-6535-5484</orcidid><oa>free_for_read</oa></addata></record> |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Carrier density Current pulses Current voltage characteristics Damage Extraterrestrial radiation Gallium oxides Gamma rays Heterojunctions Nickel oxides Radiation Radiation effects Rectifiers Reduction Room temperature |
| title | Reversible total ionizing dose effects in NiO/Ga2O3 heterojunction rectifiers |
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