Extrinsic n-type doping of Cd3As2 thin films

Cd3As2 provides an excellent platform for studying the physics of three-dimensional Dirac semimetals due to its stability as well as its compatibility with thin film growth. Crystals made using both bulk and thin film synthesis are unintentionally doped n-type, and other than introducing Zn to reduc...

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Veröffentlicht in:	Applied physics letters 2023-02, Vol.122 (6)
Hauptverfasser:	Rice, A. D., Nelson, J. N., Brooks, C., Lany, S., Alberi, K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Band structure of solids Carrier density CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS Crystal growth Density functional theory Doped films Doping Electronic structure epitaxy Film growth Metalloids Perturbation Single crystals Thin films topological materials
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