A laser source driver in 0.18 μm SiGe BiCMOS technology for high speed quantum key distribution
Quantum key distribution (QKD) has rapidly developed recently. The repetition frequency of the QKD system increases from tens or hundreds of MHz to GHz. A laser diode (LD) operating in gain-switched mode is widely used as a weak coherent light source in a QKD system. We present an LD driver circuit...
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| Veröffentlicht in: | AIP advances 2022-12, Vol.12 (12), p.125025-125025-10 |
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| container_end_page | 125025-10 |
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| container_issue | 12 |
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| container_title | AIP advances |
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| creator | Zhu, Yulong Wang, Xinzhe Zhu, Chenxi Chen, Zhaoyuan Huang, Zhisheng Jin, Zhanhong Li, Yang Liang, Futian Liao, Shengkai Peng, Chengzhi Jin, Ge |
| description | Quantum key distribution (QKD) has rapidly developed recently. The repetition frequency of the QKD system increases from tens or hundreds of MHz to GHz. A laser diode (LD) operating in gain-switched mode is widely used as a weak coherent light source in a QKD system. We present an LD driver circuit fabricated in 0.18 μm SiGe heterojunction bipolar transistor bipolar complementary metal oxide semiconductor technology. The circuit can operate at frequencies up to 2.5 GHz, satisfying the requirements of high-speed laser drives in practical QKD systems. The output current of the driver circuit can reach 100 mA when driving an LD whose input equivalent resistance is ∼21 Ω. The extinction ratio of the 1550-nm distributed feedback LD light source driven by our driver circuit reaches 23 dB at the operating frequency of 2.5 GHz, meeting the requirements of QKD systems. This circuit will be used in miniaturized QKD systems. |
| doi_str_mv | 10.1063/5.0118778 |
| format | Article |
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The repetition frequency of the QKD system increases from tens or hundreds of MHz to GHz. A laser diode (LD) operating in gain-switched mode is widely used as a weak coherent light source in a QKD system. We present an LD driver circuit fabricated in 0.18 μm SiGe heterojunction bipolar transistor bipolar complementary metal oxide semiconductor technology. The circuit can operate at frequencies up to 2.5 GHz, satisfying the requirements of high-speed laser drives in practical QKD systems. The output current of the driver circuit can reach 100 mA when driving an LD whose input equivalent resistance is ∼21 Ω. The extinction ratio of the 1550-nm distributed feedback LD light source driven by our driver circuit reaches 23 dB at the operating frequency of 2.5 GHz, meeting the requirements of QKD systems. This circuit will be used in miniaturized QKD systems.</description><identifier>ISSN: 2158-3226</identifier><identifier>EISSN: 2158-3226</identifier><identifier>DOI: 10.1063/5.0118778</identifier><identifier>CODEN: AAIDBI</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Circuits ; CMOS ; Coherent light ; Driver circuits ; Heterojunction bipolar transistors ; Light sources ; Quantum cryptography ; Semiconductor devices ; Semiconductor lasers ; Silicon germanides</subject><ispartof>AIP advances, 2022-12, Vol.12 (12), p.125025-125025-10</ispartof><rights>Author(s)</rights><rights>2022 Author(s). 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The repetition frequency of the QKD system increases from tens or hundreds of MHz to GHz. A laser diode (LD) operating in gain-switched mode is widely used as a weak coherent light source in a QKD system. We present an LD driver circuit fabricated in 0.18 μm SiGe heterojunction bipolar transistor bipolar complementary metal oxide semiconductor technology. The circuit can operate at frequencies up to 2.5 GHz, satisfying the requirements of high-speed laser drives in practical QKD systems. The output current of the driver circuit can reach 100 mA when driving an LD whose input equivalent resistance is ∼21 Ω. The extinction ratio of the 1550-nm distributed feedback LD light source driven by our driver circuit reaches 23 dB at the operating frequency of 2.5 GHz, meeting the requirements of QKD systems. This circuit will be used in miniaturized QKD systems.</description><subject>Circuits</subject><subject>CMOS</subject><subject>Coherent light</subject><subject>Driver circuits</subject><subject>Heterojunction bipolar transistors</subject><subject>Light sources</subject><subject>Quantum cryptography</subject><subject>Semiconductor devices</subject><subject>Semiconductor lasers</subject><subject>Silicon germanides</subject><issn>2158-3226</issn><issn>2158-3226</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>DOA</sourceid><recordid>eNqdkctOQyEQhonRxKZ24RuQuNKkyh26rI23pKYLdY0UOC21PVQ4x6Tv5jP4TKJt1LWzYYZ8_DP8A8AxRucYCXrBzxHGSkq1BzoEc9WnhIj9P_kh6OW8QCXYACPFOuB5CJcm-wRzbJP10KXwVqpQw6Kp4Mf7Cj6EGw8vw-h-8gAbb-d1XMbZBlYxwXmYzWFee-_ga2vqpl3BF7-BLuQmhWnbhFgfgYPKLLPv7c4ueLq-ehzd9seTm7vRcNy3jKimLzjmggoppoIPqMCCEeYM4tLzSjnknK8Qw0JawWT56oAhRSqPqbCGOyIt7YK7ra6LZqHXKaxM2uhogv6-iGmmTWqCXXpdnvPpgE6JpYrRYoURjnoqiUeIuNK-C062WusUX1ufG70o7tRlfE0kV4xJzEShTreUTTHn5Kufrhjpr31ornf7KOzZls02NObLl__BbzH9gnrtKvoJRxyVTw</recordid><startdate>20221201</startdate><enddate>20221201</enddate><creator>Zhu, Yulong</creator><creator>Wang, Xinzhe</creator><creator>Zhu, Chenxi</creator><creator>Chen, Zhaoyuan</creator><creator>Huang, Zhisheng</creator><creator>Jin, Zhanhong</creator><creator>Li, Yang</creator><creator>Liang, Futian</creator><creator>Liao, Shengkai</creator><creator>Peng, Chengzhi</creator><creator>Jin, Ge</creator><general>American Institute of Physics</general><general>AIP Publishing LLC</general><scope>AJDQP</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0001-5989-4326</orcidid><orcidid>https://orcid.org/0000-0002-4184-9583</orcidid><orcidid>https://orcid.org/0000-0002-0922-5279</orcidid><orcidid>https://orcid.org/0000-0001-9843-0559</orcidid><orcidid>https://orcid.org/0000-0002-2859-3990</orcidid><orcidid>https://orcid.org/0000-0002-4779-0615</orcidid><orcidid>https://orcid.org/0000-0002-6416-1343</orcidid><orcidid>https://orcid.org/0000-0002-4753-5243</orcidid><orcidid>https://orcid.org/0000-0002-0361-7765</orcidid><orcidid>https://orcid.org/0000-0002-4596-1863</orcidid></search><sort><creationdate>20221201</creationdate><title>A laser source driver in 0.18 μm SiGe BiCMOS technology for high speed quantum key distribution</title><author>Zhu, Yulong ; Wang, Xinzhe ; Zhu, Chenxi ; Chen, Zhaoyuan ; Huang, Zhisheng ; Jin, Zhanhong ; Li, Yang ; Liang, Futian ; Liao, Shengkai ; Peng, Chengzhi ; Jin, Ge</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c428t-651563676b6593616424da057e5f8d0ddef04167c64706394082fe136ca5d27c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Circuits</topic><topic>CMOS</topic><topic>Coherent light</topic><topic>Driver circuits</topic><topic>Heterojunction bipolar transistors</topic><topic>Light sources</topic><topic>Quantum cryptography</topic><topic>Semiconductor devices</topic><topic>Semiconductor lasers</topic><topic>Silicon germanides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhu, Yulong</creatorcontrib><creatorcontrib>Wang, Xinzhe</creatorcontrib><creatorcontrib>Zhu, Chenxi</creatorcontrib><creatorcontrib>Chen, Zhaoyuan</creatorcontrib><creatorcontrib>Huang, Zhisheng</creatorcontrib><creatorcontrib>Jin, Zhanhong</creatorcontrib><creatorcontrib>Li, Yang</creatorcontrib><creatorcontrib>Liang, Futian</creatorcontrib><creatorcontrib>Liao, Shengkai</creatorcontrib><creatorcontrib>Peng, Chengzhi</creatorcontrib><creatorcontrib>Jin, Ge</creatorcontrib><collection>AIP Open Access Journals</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>AIP advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhu, Yulong</au><au>Wang, Xinzhe</au><au>Zhu, Chenxi</au><au>Chen, Zhaoyuan</au><au>Huang, Zhisheng</au><au>Jin, Zhanhong</au><au>Li, Yang</au><au>Liang, Futian</au><au>Liao, Shengkai</au><au>Peng, Chengzhi</au><au>Jin, Ge</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A laser source driver in 0.18 μm SiGe BiCMOS technology for high speed quantum key distribution</atitle><jtitle>AIP advances</jtitle><date>2022-12-01</date><risdate>2022</risdate><volume>12</volume><issue>12</issue><spage>125025</spage><epage>125025-10</epage><pages>125025-125025-10</pages><issn>2158-3226</issn><eissn>2158-3226</eissn><coden>AAIDBI</coden><abstract>Quantum key distribution (QKD) has rapidly developed recently. 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| subjects | Circuits CMOS Coherent light Driver circuits Heterojunction bipolar transistors Light sources Quantum cryptography Semiconductor devices Semiconductor lasers Silicon germanides |
| title | A laser source driver in 0.18 μm SiGe BiCMOS technology for high speed quantum key distribution |
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