Sign reversal of the anomalous Hall effect in antiperovskite (110)-oriented Mn3.19Ga0.81N1−δ film

Sign reversal of the anomalous Hall effect in antiperovskite (110)-oriented Mn3.19Ga0.81N1−δ film

Antiperovskite compounds with abundant magnetic phase transitions provide an ideal platform for exploring nontrivial magnetotransport responses. In this study, the anomalous Hall effect (AHE) in an antiperovskite (110)-oriented Mn3.19Ga0.81N1−δ film up to room temperature was observed, and an unusua...

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Veröffentlicht in:Journal of applied physics 2022-12, Vol.132 (23)
Hauptverfasser: Han, Huimin, Sun, Ying, Shi, Kewen, Yuan, Xiuliang, Ren, Jie, Cui, Jin, Hu, Dongmei, Zhang, Kaiqi, Wang, Cong
Format: Artikel
Sprache:eng
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Antiferromagnetism
Applied physics
Carrier transport
Hall effect
Magnetic transitions
Memory devices
Phase transitions
Room temperature
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container_issue 23
container_start_page
container_title Journal of applied physics
container_volume 132
creator Han, Huimin
Sun, Ying
Shi, Kewen
Yuan, Xiuliang
Ren, Jie
Cui, Jin
Hu, Dongmei
Zhang, Kaiqi
Wang, Cong
description Antiperovskite compounds with abundant magnetic phase transitions provide an ideal platform for exploring nontrivial magnetotransport responses. In this study, the anomalous Hall effect (AHE) in an antiperovskite (110)-oriented Mn3.19Ga0.81N1−δ film up to room temperature was observed, and an unusual sign reversal was detected in the Hall measurements. The AHE reversal suggests that the carrier reversal corresponds to a magnetic transition from a ferrimagnetic order to noncollinear antiferromagnetic order at about 240 K. Analysis of the scaling relation of AHE indicates that the sign reversal originates from the transition from the skew scattering dominated AHE to the intrinsic mechanism dominated AHE. These findings will inspire effective control of the magnetic configuration and innovative applications for manipulating carrier transport in spintronic memory devices based on antiperovskite films.
doi_str_mv 10.1063/5.0105925
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source 美国小型学会期刊集（AIP Scitation平台）; Alma/SFX Local Collection
subjects Antiferromagnetism
Applied physics
Carrier transport
Hall effect
Magnetic transitions
Memory devices
Phase transitions
Room temperature
title Sign reversal of the anomalous Hall effect in antiperovskite (110)-oriented Mn3.19Ga0.81N1−δ film
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