Enhanced piezoelectric properties and domain morphology under alternating current electric field poled in [001]-oriented PIN-PMN-PT single crystal

The piezoelectric and dielectric properties of PMN-PT single crystals were significantly enhanced by alternating current electric field poling (ACP). In this work, to investigate the mechanisms of piezoelectric performance enhancement in relaxor ferroelectric single crystals by ACP, a [001]-oriented...

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Veröffentlicht in:Journal of applied physics 2022-09, Vol.132 (11)
Hauptverfasser: Song, Kexin, Ma, Ming, Hu, Qingyuan, Qiao, Liao, Zhao, Jinyan, Qiu, Chaorui, Liu, Jinfeng, Luan, Peng, Guo, Haisheng, Li, Fei, Li, Zhenrong, Fan, Shiji, Xu, Zhuo
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container_issue 11
container_start_page
container_title Journal of applied physics
container_volume 132
creator Song, Kexin
Ma, Ming
Hu, Qingyuan
Qiao, Liao
Zhao, Jinyan
Qiu, Chaorui
Liu, Jinfeng
Luan, Peng
Guo, Haisheng
Li, Fei
Li, Zhenrong
Fan, Shiji
Xu, Zhuo
description The piezoelectric and dielectric properties of PMN-PT single crystals were significantly enhanced by alternating current electric field poling (ACP). In this work, to investigate the mechanisms of piezoelectric performance enhancement in relaxor ferroelectric single crystals by ACP, a [001]-oriented PIN-PMN-PT single crystal with a diameter of 3 in was grown by the modified Bridgman method, and a series of single crystal samples within 100 mm of the height of the crystal boule were prepared. Compared with their direct current electric field poling (DCP) counterparts, the electrical properties of single crystal samples at different heights by ACP were regularly enhanced. The piezoelectric coefficient d33 and the dielectric constant ɛ33 of the rhombohedral samples both increased by nearly 20%. Based on the results of polarized light microscopy, the domain wall in [001]-poled ACP samples could not be observed along the [001] direction. The brightness of polarized light propagating along the [010] orientation was enhanced after ACP. The domain images of {100} in the DCP and ACP samples were observed by piezoelectric force microscopy. The results showed that the domain size of ACP samples increased. The existence of layered domains can be clearly found in the scanning electron microscopy results of the stress fracture surface of the ACP sample. According to the analysis, the improvement of the piezoelectric performance in ACP samples comes from the elimination of the 71° domain walls. This work demonstrates that certain ACPs can regulate the domain structure and steadily improve the piezoelectric properties of R-phase PIN-PMN-PT single crystals.
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In this work, to investigate the mechanisms of piezoelectric performance enhancement in relaxor ferroelectric single crystals by ACP, a [001]-oriented PIN-PMN-PT single crystal with a diameter of 3 in was grown by the modified Bridgman method, and a series of single crystal samples within 100 mm of the height of the crystal boule were prepared. Compared with their direct current electric field poling (DCP) counterparts, the electrical properties of single crystal samples at different heights by ACP were regularly enhanced. The piezoelectric coefficient d33 and the dielectric constant ɛ33 of the rhombohedral samples both increased by nearly 20%. Based on the results of polarized light microscopy, the domain wall in [001]-poled ACP samples could not be observed along the [001] direction. The brightness of polarized light propagating along the [010] orientation was enhanced after ACP. The domain images of {100} in the DCP and ACP samples were observed by piezoelectric force microscopy. The results showed that the domain size of ACP samples increased. The existence of layered domains can be clearly found in the scanning electron microscopy results of the stress fracture surface of the ACP sample. According to the analysis, the improvement of the piezoelectric performance in ACP samples comes from the elimination of the 71° domain walls. 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In this work, to investigate the mechanisms of piezoelectric performance enhancement in relaxor ferroelectric single crystals by ACP, a [001]-oriented PIN-PMN-PT single crystal with a diameter of 3 in was grown by the modified Bridgman method, and a series of single crystal samples within 100 mm of the height of the crystal boule were prepared. Compared with their direct current electric field poling (DCP) counterparts, the electrical properties of single crystal samples at different heights by ACP were regularly enhanced. The piezoelectric coefficient d33 and the dielectric constant ɛ33 of the rhombohedral samples both increased by nearly 20%. Based on the results of polarized light microscopy, the domain wall in [001]-poled ACP samples could not be observed along the [001] direction. The brightness of polarized light propagating along the [010] orientation was enhanced after ACP. The domain images of {100} in the DCP and ACP samples were observed by piezoelectric force microscopy. The results showed that the domain size of ACP samples increased. The existence of layered domains can be clearly found in the scanning electron microscopy results of the stress fracture surface of the ACP sample. According to the analysis, the improvement of the piezoelectric performance in ACP samples comes from the elimination of the 71° domain walls. 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In this work, to investigate the mechanisms of piezoelectric performance enhancement in relaxor ferroelectric single crystals by ACP, a [001]-oriented PIN-PMN-PT single crystal with a diameter of 3 in was grown by the modified Bridgman method, and a series of single crystal samples within 100 mm of the height of the crystal boule were prepared. Compared with their direct current electric field poling (DCP) counterparts, the electrical properties of single crystal samples at different heights by ACP were regularly enhanced. The piezoelectric coefficient d33 and the dielectric constant ɛ33 of the rhombohedral samples both increased by nearly 20%. Based on the results of polarized light microscopy, the domain wall in [001]-poled ACP samples could not be observed along the [001] direction. The brightness of polarized light propagating along the [010] orientation was enhanced after ACP. The domain images of {100} in the DCP and ACP samples were observed by piezoelectric force microscopy. The results showed that the domain size of ACP samples increased. The existence of layered domains can be clearly found in the scanning electron microscopy results of the stress fracture surface of the ACP sample. According to the analysis, the improvement of the piezoelectric performance in ACP samples comes from the elimination of the 71° domain walls. This work demonstrates that certain ACPs can regulate the domain structure and steadily improve the piezoelectric properties of R-phase PIN-PMN-PT single crystals.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0102136</doi><tpages>11</tpages><orcidid>https://orcid.org/0000-0003-2177-8260</orcidid><orcidid>https://orcid.org/0000-0003-1860-3814</orcidid><orcidid>https://orcid.org/0000-0001-5234-3644</orcidid><orcidid>https://orcid.org/0000-0002-1873-4091</orcidid></addata></record>
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subjects Alternating current
Applied physics
Bridgman method
Crystal growth
Crystal structure
Dielectric properties
Direct current
Domain walls
Electric fields
Electrical properties
Ferroelectricity
Fracture surfaces
Image enhancement
Microscopy
Optical microscopy
Performance enhancement
Piezoelectricity
Polarized light
Single crystals
title Enhanced piezoelectric properties and domain morphology under alternating current electric field poled in [001]-oriented PIN-PMN-PT single crystal
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