Charge transport behaviors in a multi-gated WSe2/MoS2 heterojunction

Heterojunctions and multi-gated structures facilitate the fabrication of high-performance and multifunctional transistors. Here, a WSe2/MoS2 heterojunction structure transistor with a back gate and two top gates is proposed. The back gate controls the carrier transport of the entire heterojunction c...

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Veröffentlicht in:	Applied physics letters 2022-07, Vol.121 (4)
Hauptverfasser:	Yang, Maolong, Lu, Yao, Zhang, Qiancui, Han, Zhao, Zhang, Yichi, Liu, Maliang, Zhang, Ningning, Hu, Huiyong, Wang, Liming
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Carrier transport Charge transport Electric potential Electronic devices Energy bands Heterojunction devices Heterostructures Logic circuits Molybdenum disulfide Semiconductor devices Transconductance Transistors Valleys Voltage
Online-Zugang:	Volltext
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