Electron accumulation and distribution at interfaces of hexagonal Sc x Al1− x N/GaN- and Sc x Al1− x N/InN-heterostructures

Electron charges and distribution profiles induced by polarization gradients at the interfaces of pseudomorphic, hexagonal ScxAl1−xN/GaN- and ScxAl1−xN/InN-heterostructures are simulated by using a Schrödinger–Poisson solver across the entire range of random and metal-face ScxAl1−xN-alloys, consider...

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Veröffentlicht in:	Journal of applied physics 2022-06, Vol.131 (24)
Hauptverfasser:	Ambacher, O., Yassine, A., Yassine, M., Mihalic, S., Wade, E., Christian, B.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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