Epitaxial growth and phase evolution of ferroelectric La-doped HfO2 films

Hafnium-oxide-based materials are considered a promising candidate for next-generation nonvolatile memory devices owing to their good CMOS compatibility and robust ferroelectricity at the nanoscale. In this work, we synthesize highly (111)-oriented La-doped HfO2 (HLO) ferroelectric thin films via pu...

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Veröffentlicht in:	Applied physics letters 2022-04, Vol.120 (16)
Hauptverfasser:	Shen, Zhi, Liao, Lei, Zhou, Yong, Xiong, Ke, Zeng, Jinhua, Wang, Xudong, Chen, Yan, Liu, Jingjing, Guo, Tianle, Zhang, Shukui, Lin, Tie, Shen, Hong, Meng, Xiangjian, Wang, Yiwei, Cheng, Yan, Yang, Jing, Chen, Pan, Wang, Lifen, Bai, Xuedong, Chu, Junhao, Wang, Jianlu
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Electronegativity Epitaxial growth Ferroelectric materials Ferroelectricity Hafnium oxide Manganese dioxide Memory devices Pulsed laser deposition Pulsed lasers Robustness Thick films Thin films
Online-Zugang:	Volltext
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