Dipole scattering at the interface: The origin of low mobility observed in SiC MOSFETs
In this work, the origin of the low free electron mobility in SiC MOSFETs is investigated using the scattering theory of two-dimensional electron gases. We first establish that neither phonon scattering nor Coulomb scattering can be the cause of the low observed mobility in SiC MOSFETs; we establish...
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Veröffentlicht in: | Journal of applied physics 2022-04, Vol.131 (14) |
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creator | Hatakeyama, Tetsuo Hirai, Hirohisa Sometani, Mitsuru Okamoto, Dai Okamoto, Mitsuo Harada, Shinsuke |
description | In this work, the origin of the low free electron mobility in SiC MOSFETs is investigated using the scattering theory of two-dimensional electron gases. We first establish that neither phonon scattering nor Coulomb scattering can be the cause of the low observed mobility in SiC MOSFETs; we establish this fact by comparing the theoretically calculated mobility considering these effects with experimental observations. By considering the threshold voltages and the effective field dependence of the mobility in SiC MOSFETs, it is concluded that the scattering centers of the dominant mechanism are electrically neutral and exhibit a short-range scattering potential. By considering a charge distribution around a neutral defect at the interface, it is established that an electric dipole induced by the defect can act as a short-range scattering potential. We then calculate the mobility in SiC MOSFETs assuming that there exists a high density of dipoles at the interface. The calculated dipole-scattering-limited mobility shows a similar dependence on the effective field dependence to that observed in experimental results. Thus, we conclude that scattering induced by a high density of electric dipoles at the interface is the dominant cause of the low mobility in SiC MOSFETs. |
doi_str_mv | 10.1063/5.0086172 |
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We first establish that neither phonon scattering nor Coulomb scattering can be the cause of the low observed mobility in SiC MOSFETs; we establish this fact by comparing the theoretically calculated mobility considering these effects with experimental observations. By considering the threshold voltages and the effective field dependence of the mobility in SiC MOSFETs, it is concluded that the scattering centers of the dominant mechanism are electrically neutral and exhibit a short-range scattering potential. By considering a charge distribution around a neutral defect at the interface, it is established that an electric dipole induced by the defect can act as a short-range scattering potential. We then calculate the mobility in SiC MOSFETs assuming that there exists a high density of dipoles at the interface. The calculated dipole-scattering-limited mobility shows a similar dependence on the effective field dependence to that observed in experimental results. Thus, we conclude that scattering induced by a high density of electric dipoles at the interface is the dominant cause of the low mobility in SiC MOSFETs.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/5.0086172</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Charge distribution ; Density ; Electric dipoles ; Electron mobility ; Free electrons ; Mathematical analysis ; MOSFETs ; Scattering ; Threshold voltage</subject><ispartof>Journal of applied physics, 2022-04, Vol.131 (14)</ispartof><rights>Author(s)</rights><rights>2022 Author(s). 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We first establish that neither phonon scattering nor Coulomb scattering can be the cause of the low observed mobility in SiC MOSFETs; we establish this fact by comparing the theoretically calculated mobility considering these effects with experimental observations. By considering the threshold voltages and the effective field dependence of the mobility in SiC MOSFETs, it is concluded that the scattering centers of the dominant mechanism are electrically neutral and exhibit a short-range scattering potential. By considering a charge distribution around a neutral defect at the interface, it is established that an electric dipole induced by the defect can act as a short-range scattering potential. We then calculate the mobility in SiC MOSFETs assuming that there exists a high density of dipoles at the interface. The calculated dipole-scattering-limited mobility shows a similar dependence on the effective field dependence to that observed in experimental results. Thus, we conclude that scattering induced by a high density of electric dipoles at the interface is the dominant cause of the low mobility in SiC MOSFETs.</description><subject>Applied physics</subject><subject>Charge distribution</subject><subject>Density</subject><subject>Electric dipoles</subject><subject>Electron mobility</subject><subject>Free electrons</subject><subject>Mathematical analysis</subject><subject>MOSFETs</subject><subject>Scattering</subject><subject>Threshold voltage</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNqd0E1LAzEQBuAgCq7Vg_8g4Elha7LJ7ibepH5CpYdWr2GTTWrKdrMmaaX_3kgL3j0NMzzMDC8AlxiNMarIbTlGiFW4Lo5AhhHjeV2W6BhkCBU4Z7zmp-AshBVCGDPCM_DxYAfXaRhUE6P2tl_CJsL4qaHtU28ape_gIrXO26XtoTOwc99w7aTtbNxBJ4P2W90mDud2At9m86fHRTgHJ6bpgr441BF4T-PJSz6dPb9O7qe5ogWLuayk5rTlvMJEK0lpTVttmFZMM2oIJ-lLXDCJKWmLEjU1Va2SDNdGyrZAiozA1X7v4N3XRocoVm7j-3RSFBVlBCGOSVLXe6W8C8FrIwZv143fCYzEb2yiFIfYkr3Z26BsbKJ1_f_w1vk_KIbWkB-Gs3o-</recordid><startdate>20220414</startdate><enddate>20220414</enddate><creator>Hatakeyama, Tetsuo</creator><creator>Hirai, Hirohisa</creator><creator>Sometani, Mitsuru</creator><creator>Okamoto, Dai</creator><creator>Okamoto, Mitsuo</creator><creator>Harada, Shinsuke</creator><general>American Institute of Physics</general><scope>AJDQP</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-2802-2282</orcidid><orcidid>https://orcid.org/0000-0002-8208-8469</orcidid><orcidid>https://orcid.org/0000-0003-2494-1764</orcidid><orcidid>https://orcid.org/0000-0003-3261-8705</orcidid><orcidid>https://orcid.org/0000-0002-0053-4606</orcidid><orcidid>https://orcid.org/0000-0003-2277-048X</orcidid></search><sort><creationdate>20220414</creationdate><title>Dipole scattering at the interface: The origin of low mobility observed in SiC MOSFETs</title><author>Hatakeyama, Tetsuo ; Hirai, Hirohisa ; Sometani, Mitsuru ; Okamoto, Dai ; Okamoto, Mitsuo ; Harada, Shinsuke</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c428t-b6be94d99613ecb4474def8ec8e84f393118128b143d250a74cdcb817fbbd20c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Applied physics</topic><topic>Charge distribution</topic><topic>Density</topic><topic>Electric dipoles</topic><topic>Electron mobility</topic><topic>Free electrons</topic><topic>Mathematical analysis</topic><topic>MOSFETs</topic><topic>Scattering</topic><topic>Threshold voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hatakeyama, Tetsuo</creatorcontrib><creatorcontrib>Hirai, Hirohisa</creatorcontrib><creatorcontrib>Sometani, Mitsuru</creatorcontrib><creatorcontrib>Okamoto, Dai</creatorcontrib><creatorcontrib>Okamoto, Mitsuo</creatorcontrib><creatorcontrib>Harada, Shinsuke</creatorcontrib><collection>AIP Open Access Journals</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hatakeyama, Tetsuo</au><au>Hirai, Hirohisa</au><au>Sometani, Mitsuru</au><au>Okamoto, Dai</au><au>Okamoto, Mitsuo</au><au>Harada, Shinsuke</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Dipole scattering at the interface: The origin of low mobility observed in SiC MOSFETs</atitle><jtitle>Journal of applied physics</jtitle><date>2022-04-14</date><risdate>2022</risdate><volume>131</volume><issue>14</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>In this work, the origin of the low free electron mobility in SiC MOSFETs is investigated using the scattering theory of two-dimensional electron gases. We first establish that neither phonon scattering nor Coulomb scattering can be the cause of the low observed mobility in SiC MOSFETs; we establish this fact by comparing the theoretically calculated mobility considering these effects with experimental observations. By considering the threshold voltages and the effective field dependence of the mobility in SiC MOSFETs, it is concluded that the scattering centers of the dominant mechanism are electrically neutral and exhibit a short-range scattering potential. By considering a charge distribution around a neutral defect at the interface, it is established that an electric dipole induced by the defect can act as a short-range scattering potential. We then calculate the mobility in SiC MOSFETs assuming that there exists a high density of dipoles at the interface. The calculated dipole-scattering-limited mobility shows a similar dependence on the effective field dependence to that observed in experimental results. Thus, we conclude that scattering induced by a high density of electric dipoles at the interface is the dominant cause of the low mobility in SiC MOSFETs.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0086172</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0002-2802-2282</orcidid><orcidid>https://orcid.org/0000-0002-8208-8469</orcidid><orcidid>https://orcid.org/0000-0003-2494-1764</orcidid><orcidid>https://orcid.org/0000-0003-3261-8705</orcidid><orcidid>https://orcid.org/0000-0002-0053-4606</orcidid><orcidid>https://orcid.org/0000-0003-2277-048X</orcidid><oa>free_for_read</oa></addata></record> |
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subjects | Applied physics Charge distribution Density Electric dipoles Electron mobility Free electrons Mathematical analysis MOSFETs Scattering Threshold voltage |
title | Dipole scattering at the interface: The origin of low mobility observed in SiC MOSFETs |
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