Characterization of PN junctions of doped Mott insulators
A heterojunction comprising a La1.9Sr0.1CuO4 thin film on a 0.5 wt. % Nb doped SrTiO3 single-crystal substrate was fabricated using magnetron sputtering deposition and ion milling etching techniques. Rectification has been observed in the current–voltage characteristics of the heterojunctions from 3...
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| Veröffentlicht in: | AIP advances 2021-12, Vol.11 (12), p.125226-125226-6 |
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| container_end_page | 125226-6 |
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| container_issue | 12 |
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| container_title | AIP advances |
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| creator | Wang, Shu-tong Zhang, Yiou Marston, J. B. Xiao, Gang |
| description | A heterojunction comprising a La1.9Sr0.1CuO4 thin film on a 0.5 wt. % Nb doped SrTiO3 single-crystal substrate was fabricated using magnetron sputtering deposition and ion milling etching techniques. Rectification has been observed in the current–voltage characteristics of the heterojunctions from 30 to 300 K. The temperature evolution of the ideality factor implies the important role of barrier inhomogeneity at the junction interface. A systematic study of capacitance as a function of frequency under different bias voltages at room temperature was also carried out. The capacitance can be explained by deep-level defects in the space charge region. |
| doi_str_mv | 10.1063/5.0076151 |
| format | Article |
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B. ; Xiao, Gang</creator><creatorcontrib>Wang, Shu-tong ; Zhang, Yiou ; Marston, J. B. ; Xiao, Gang</creatorcontrib><description>A heterojunction comprising a La1.9Sr0.1CuO4 thin film on a 0.5 wt. % Nb doped SrTiO3 single-crystal substrate was fabricated using magnetron sputtering deposition and ion milling etching techniques. Rectification has been observed in the current–voltage characteristics of the heterojunctions from 30 to 300 K. The temperature evolution of the ideality factor implies the important role of barrier inhomogeneity at the junction interface. A systematic study of capacitance as a function of frequency under different bias voltages at room temperature was also carried out. 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The capacitance can be explained by deep-level defects in the space charge region.</description><subject>Capacitance</subject><subject>Crystal defects</subject><subject>Current voltage characteristics</subject><subject>Heterojunctions</subject><subject>Inhomogeneity</subject><subject>Insulators</subject><subject>Magnetron sputtering</subject><subject>Niobium</subject><subject>P-n junctions</subject><subject>Room temperature</subject><subject>Single crystals</subject><subject>Space charge</subject><subject>Substrates</subject><subject>Temperature</subject><subject>Thin films</subject><issn>2158-3226</issn><issn>2158-3226</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>DOA</sourceid><recordid>eNqdkEtLxDAQx4souOge_AYFTwq75tGkyVEWHwvr46DnMM1DW9amJqmgn97udlHPDgzz4Md_hn-WnWA0x4jTCzZHqOSY4b1sQjATM0oI3__TH2bTGBs0RCExEsUkk4tXCKCTDfUXpNq3uXf5433e9K3ejHEzG99Zk9_5lPK6jf0akg_xODtwsI52uqtH2fP11dPidrZ6uFkuLlczTRlNM0EM0UYWWBJKwILUbMiKF87qChvmJMVCYl5yARY7CkUFAhnkSmAVwYYeZctR13hoVBfqNwifykOttgsfXhSEVOu1VbQsEQjMkOVFwZgFokuGgBFuHDOVG7ROR60u-PfexqQa34d2eF8RjgmWUgo2UGcjpYOPMVj3cxUjtTFaMbUzemDPRzbqOm0N_B_84cMvqDrj6Dd2IIoP</recordid><startdate>20211201</startdate><enddate>20211201</enddate><creator>Wang, Shu-tong</creator><creator>Zhang, Yiou</creator><creator>Marston, J. 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| source | DOAJ Directory of Open Access Journals; EZB-FREE-00999 freely available EZB journals; Alma/SFX Local Collection; Free Full-Text Journals in Chemistry |
| subjects | Capacitance Crystal defects Current voltage characteristics Heterojunctions Inhomogeneity Insulators Magnetron sputtering Niobium P-n junctions Room temperature Single crystals Space charge Substrates Temperature Thin films |
| title | Characterization of PN junctions of doped Mott insulators |
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