Threshold switching in solar cells and a no-scribe photovoltaic technology

We show that thin film cadmium telluride (CdTe) solar cells exhibit the phenomenon of threshold switching similar to that in phase change and resistive memory. It creates a conductive filament (shunt) through the solar cell reaching the buried electrode such as transparent conductive oxide in CdTe b...

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Veröffentlicht in:Applied physics letters 2021-11, Vol.119 (19)
Hauptverfasser: Karpov, Victor G., Shvydka, Diana, Bista, Sandip S.
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creator Karpov, Victor G.
Shvydka, Diana
Bista, Sandip S.
description We show that thin film cadmium telluride (CdTe) solar cells exhibit the phenomenon of threshold switching similar to that in phase change and resistive memory. It creates a conductive filament (shunt) through the solar cell reaching the buried electrode such as transparent conductive oxide in CdTe based photovoltaics (PV). While in the existing PV, the buried electrode was routinely contacted via laser scribe filled metals, our work paves a way to an alternative technology of no-scribe PV.
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subjects Alternative technology
Applied physics
Cadmium telluride
Cadmium tellurides
Photovoltaic cells
Solar cells
Switching
Thin films
title Threshold switching in solar cells and a no-scribe photovoltaic technology
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