Stabilization of thick, rhombohedral Hf0.5Zr0.5O2 epilayer on c-plane ZnO

Metastable rhombohedral hafnia-based ferroelectric films are emerging as a promising candidate in ferroelectric nonvolatile memory technologies, but the limited critical thickness impedes their applications. Herein, a 35-nm-thick rhombohedral Hf0.5Zr0.5O2 epilayer was stabilized on ZnO(0001) under a...

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Veröffentlicht in:	Applied physics letters 2021-10, Vol.119 (17)
Hauptverfasser:	Zheng, Maoyuan, Yin, Zhigang, Cheng, Yong, Zhang, Xingwang, Wu, Jinliang, Qi, Jing
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Epitaxial growth Ferroelectric materials Ferroelectricity First principles Hafnium oxide Symmetry Zinc oxide
Online-Zugang:	Volltext
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